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BFS480 PDF预览

BFS480

更新时间: 2024-09-08 22:39:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管通信
页数 文件大小 规格书
6页 56K
描述
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

BFS480 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.35
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.01 A基于收集器的最大容量:0.4 pF
集电极-发射极最大电压:8 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):30最高频带:L BAND
JESD-30 代码:R-PDSO-G6湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):7500 MHzBase Number Matches:1

BFS480 数据手册

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BFS 480  
NPN Silicon RF Transistor  
• For low noise, low-power amplifiers in mobile  
communication systems (pager, cordless  
telephone) at collector currents from 0.2mA to 8mA  
f = 7GHz  
T
F = 1.5dB at 900MHz  
• Two (galvanic) internal isolated  
Transistors in one package  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
BFS 480  
REs Q62702-F1531  
1/4 = B 2/5 = E  
3/6 = C  
SOT-363  
data below is of a single transistor  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
8
V
CEO  
CES  
CBO  
EBO  
10  
10  
2
I
I
10  
1.2  
mA  
mW  
°C  
C
Base current  
B
Total power dissipation  
P
tot  
T
112 °C  
80  
S
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
150  
j
- 65 ... + 150  
- 65 ... + 150  
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
470  
K/W  
thJS  
1) T is measured on the collector lead at the soldering point to the pcb.  
S
Semiconductor Group  
1
Dec-16-1996  

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