BFS460L6

更新时间： 2024-11-04 22:36:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管射频
页数	文件大小	规格书
3页	130K
描述
NPN Silicon RF TWIN Transistor

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BFS460L6 数据手册

BFS460L6

NPN Silicon RF TWIN Transistor

• High f of 22 GHz

• For low voltage / low current applications

• Ideal for VCO modules and low noise amplifiers

• Low noise figure: 1.1 dB at 1.8 GHz

• World's smallest SMD 6-pin leadless package

• Excellent ESD performance

• Built in 2 transistors (TR1, TR2: die as BFR460L3)

* Short-term description

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFS460L6

Marking

Pin Configuration

1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1

Package

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

T > 0 °C

CEO

4.5

4.2

1.5

T ≤ 0 °C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

°C

200

Base current

Total power dissipation

tot

T ≤ 104°C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

T is measured on the collector lead at the soldering point to the pcb

Jun-15-2004

12 3

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