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BFP460H6327XTSA1 PDF预览

BFP460H6327XTSA1

更新时间: 2024-11-11 19:22:03
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
10页 649K
描述
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, S Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4

BFP460H6327XTSA1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT PACKAGE-4Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:1.66其他特性:LOW NOISE
最大集电极电流 (IC):0.07 A基于收集器的最大容量:0.45 pF
集电极-发射极最大电压:4.5 V配置:SINGLE
最高频带:S BANDJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN参考标准:AEC-Q101
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):22000 MHz
Base Number Matches:1

BFP460H6327XTSA1 数据手册

 浏览型号BFP460H6327XTSA1的Datasheet PDF文件第2页浏览型号BFP460H6327XTSA1的Datasheet PDF文件第3页浏览型号BFP460H6327XTSA1的Datasheet PDF文件第4页浏览型号BFP460H6327XTSA1的Datasheet PDF文件第5页浏览型号BFP460H6327XTSA1的Datasheet PDF文件第6页浏览型号BFP460H6327XTSA1的Datasheet PDF文件第7页 
BFP460  
Low Noise Silicon Bipolar RF Transistor  
General purpose low noise amplifier  
3
for low voltage, low current applications  
2
1
4
High ESD robustness, typical 1500 V (HBM)  
Low minimum noise figure 1.1 dB at 1.8 GHz  
High linearity: output compression point  
OP1dB = 13 dBm @ 3 V, 35 mA, 1.8 GHz  
Pb-free (RoHS compliant) and halogen-free package  
with visible leads  
Qualification report according to AEC-Q101 available  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFP460  
Marking  
ABs  
Pin Configuration  
1 = E 2 = C 3 = E 4=B  
Package  
SOT343  
-
-
Maximum Ratings at T = 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
V
CEO  
T = 25 °C  
4.5  
4.2  
15  
15  
1.5  
70  
A
T = -55 °C  
A
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CES  
CBO  
EBO  
mA  
mW  
°C  
I
C
7
230  
Base current  
Total power dissipation  
I
B
1)  
P
tot  
T 92°C  
S
150  
-65 ... 150  
-65 ... 150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
J
T
A
T
Stg  
1
T is measured on the collector lead at the soldering point to the pcb  
S
2013-09-13  
1

BFP460H6327XTSA1 替代型号

型号 品牌 替代类型 描述 数据表
BFP460H6433XTMA1 INFINEON

完全替代

RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, S Band, Silicon, NPN, ROHS COMP

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