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BFP490 PDF预览

BFP490

更新时间: 2024-09-30 22:27:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管射频光电二极管放大器
页数 文件大小 规格书
8页 49K
描述
NPN Silicon RF Transistor (Q62702-F1721)

BFP490 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.37
其他特性:HIGH RELIABILITY外壳连接:EMITTER
最大集电极电流 (IC):0.6 A基于收集器的最大容量:5 pF
集电极-发射极最大电压:4.5 V配置:SINGLE
最小直流电流增益 (hFE):50最高频带:L BAND
JESD-30 代码:R-PDSO-G5JESD-609代码:e3
元件数量:1端子数量:5
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):17500 MHz
Base Number Matches:1

BFP490 数据手册

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SIEGET 25  
BFP 490  
NPN Silicon RF Transistor  
Preliminary data  
4
For high power amplifiers  
5
Compression point P  
= 26.5 dBm at 1.8 GHz  
-1dB  
maxim. available Gain G = 9.5 dB at 1.8 GHz  
ma  
3
2
Transition frequency f > 17 GHz  
T
Gold metalization for high reliability  
SIEGET 25 - Line  
1
VPW05980  
Siemens Grounded Emitter Transistor  
25 GHz f - Line  
T
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
AOs Q62702-F1721  
Pin Configuration  
Package  
BFP 490  
1 = B 2 = E 3 = C 4 = C 5 = E SCT-595  
Maximum Ratings  
Parameter  
Symbol  
Value  
4.5  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CBO  
EBO  
15  
1.5  
600  
mA  
I
C
Base current  
60  
I
B
1000  
150  
mW  
°C  
Total power dissipation, T 85 °C  
P
tot  
S
Junction temperature  
Ambient temperature  
Storage temperature  
T
j
-65 ...+150  
-65 ...+150  
T
T
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
K/W  
R
65  
thJS  
1) TS is measured on the emitter lead at the soldering point  
mounted on alumina 15 mm x 16,7 mm x 0.7 mm  
Semiconductor Group  
1
Sep-09-1998  
1998-11-01  
Semiconductor Group  
1

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