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BD438-BP-HF PDF预览

BD438-BP-HF

更新时间: 2024-11-28 13:05:55
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管开关局域网
页数 文件大小 规格书
3页 260K
描述
Power Bipolar Transistor,

BD438-BP-HF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.66湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BD438-BP-HF 数据手册

 浏览型号BD438-BP-HF的Datasheet PDF文件第2页浏览型号BD438-BP-HF的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
BD434/BD436/BD438  
Micro Commercial Components  
Features  
·
Intended for use in medium power near and switching applications  
With TO-126 package  
PNP Silicon  
Power Transistors  
The complementary NPN type is BD433, BD435, BD437  
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
x
ꢀꢁꢂꢃꢄꢅꢆ  
Marking: Type Number  
K
A
N
Maximum Ratings  
Symbol  
VCEO  
Rating  
Collector-Emitter Voltage  
Rating  
-22  
Unit  
BD434  
BD436  
BD438  
BD434  
BD436  
BD438  
BD434  
BD436  
BD438  
V
V
V
A
D
-32  
-45  
-22  
-32  
-45  
E
VCBO  
Collector-Base Voltage  
Emitter-Base Voltage  
M
B
VEBO  
-5.0  
1
2
3
IC  
PC  
TJ  
Collector Current  
-4.0  
1.25  
-55 to +150  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
W
R
R
L
G
TSTG  
-55 to +150  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
C
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
(IC=-10mAdc, IB=0)  
BD434  
BD436  
BD438  
-22  
-32  
-45  
---  
---  
---  
Vdc  
V(BR)CBO  
Collector-Base Breakdown Voltage  
(IC=-1mAdc, IE=0)  
BD434  
BD436  
BD438  
-22  
-32  
-45  
---  
---  
---  
F
Q
Vdc  
Vdc  
PIN 1.  
PIN 2.  
PIN 3.  
EMITTER  
COLLECTOR  
BASE  
J
V(BR)EBO  
ICBO  
Emitter-Base Breakdown Voltage  
(IE=-1mAdc, IC=0)  
-5  
---  
DIMENSIONS  
Collector-Base Cutoff Current  
(VCB=-22Vdc,IE=0)  
(VCB=-32Vdc,IE=0)  
(VCB=-45Vdc,IE=0)  
Collector-Base Cutoff Current  
(VCE=-22Vdc,IE=0)  
(VCE=-32Vdc,IE=0)  
(VCE=-45Vdc,IE=0)  
Emitter-Base Cutoff Current  
(VEB=-5.0Vdc, IC=0)  
BD434  
BD436  
BD438  
---  
-100  
uAdc  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢀꢁꢆ  
ꢇꢇꢆ  
ꢈꢀꢇꢆ  
ꢉꢆ  
ꢇꢉꢊꢆ  
0.307ꢆ  
0.433  
0.618  
ꢎꢏꢐꢒ1  
0.126  
0.034  
0.054  
ꢇꢀꢁꢆ  
ꢇꢉꢊꢆ  
ꢁꢋꢌꢄꢆ  
0.291  
0.417  
0.602  
ꢎꢏꢐꢑ4  
0.118  
0.026  
0.046  
7.40  
10.60  
7.80  
11.00  
15.70  
4.10  
3.20  
0.86  
1.37  
ICEO  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
15.30  
3.90  
3.00  
0.66  
1.17  
BD434  
BD436  
BD438  
---  
---  
-100  
-1.0  
uAdc  
IEBO  
mAdc  
ꢕꢆ  
0.090TYP  
0.098  
2.290TYP  
ꢖꢆ  
0.114  
2.50  
2.90  
2.30  
0.30  
1.50  
0.60  
L
M
N
0.083  
0.000  
0.043  
0.091  
0.012  
0.059  
2.10  
0.00  
1.10  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.  
Q
0.018  
0.024  
0.45  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

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