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BD439G PDF预览

BD439G

更新时间: 2024-02-15 07:23:50
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 61K
描述
Plastic Medium Power Silicon NPN Transistor

BD439G 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.71
JESD-609代码:e0峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Tin/Lead (Sn/Pb)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BD439G 数据手册

 浏览型号BD439G的Datasheet PDF文件第2页浏览型号BD439G的Datasheet PDF文件第3页浏览型号BD439G的Datasheet PDF文件第4页 
BD435, BD437, BD439,  
BD441  
Plastic Medium Power  
Silicon NPN Transistor  
This series of plastic, medium−power silicon NPN transistors can be  
used for amplifier and switching applications. Complementary types  
are BD438 and BD442.  
http://onsemi.com  
4.0 AMPERES  
POWER TRANSISTORS  
NPN SILICON  
Features  
Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
TO−225AA  
CASE 77  
STYLE 1  
Collector−Emitter Voltage  
BD435  
BD437  
BD439  
BD441  
V
CEO  
V
CBO  
V
EBO  
32  
45  
60  
80  
Vdc  
3
2
1
Collector−Base Voltage  
BD435  
BD437  
BD439  
BD441  
32  
45  
60  
80  
Vdc  
MARKING DIAGRAM  
Emitter−Base Voltage  
Collector Current  
Base Current  
5.0  
4.0  
1.0  
Vdc  
Adc  
Adc  
YWW  
BD4xxG  
I
C
I
B
BD4xx = Device Code  
xx = 35, 37, 37T, 39, 41  
Total Device Dissipation @ T = 25°C  
P
36  
288  
W
W/°C  
C
D
Derate above 25°C  
Y
= Year  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
WW  
G
= Work Week  
= Pb−Free Package  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
Symbol  
Max  
Unit  
Device  
Package  
Shipping  
Thermal Resistance, Junction−to−Case  
q
3.5  
°C/W  
JC  
BD435  
TO−225AA  
500 Units/Box  
500 Units/Box  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
BD435G  
TO−225AA  
(Pb−Free)  
BD437  
TO−225AA  
500 Units/Box  
500 Units/Box  
BD437G  
TO−225AA  
(Pb−Free)  
BD437T  
TO−225AA  
50 Units/Rail  
50 Units/Rail  
BD437TG  
TO−225AA  
(Pb−Free)  
BD439  
TO−225AA  
500 Units/Box  
500 Units/Box  
BD439G  
TO−225AA  
(Pb−Free)  
BD441  
TO−225AA  
500 Units/Box  
500 Units/Box  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
BD441G  
TO−225AA  
(Pb−Free)  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
October, 2005− Rev. 14  
BD437/D  

BD439G 替代型号

型号 品牌 替代类型 描述 数据表
BD439 ONSEMI

类似代替

Plastic Medium Power Silicon NPN Transistor
BD439S FAIRCHILD

功能相似

NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD),
BD439 STMICROELECTRONICS

功能相似

COMPLEMENTARY SILICON POWER TRANSISTORS

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Medium Power NPN Bipolar Power Transistor
BD439TIN/LEAD CENTRAL

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