是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.3 | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 25 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 36 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BD439S | FAIRCHILD |
类似代替 |
NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), | |
BD439 | ONSEMI |
类似代替 |
Plastic Medium Power Silicon NPN Transistor | |
BD439G | ONSEMI |
功能相似 |
Plastic Medium Power Silicon NPN Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD439TIN/LEAD | CENTRAL |
获取价格 |
Power Bipolar Transistor, | |
BD440 | INFINEON |
获取价格 |
PNP SILICON EPIBASE TRANSISTORS | |
BD440 | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
BD440 | SECOS |
获取价格 |
Plastic Encapsulate Transistors | |
BD440 | ISC |
获取价格 |
Silicon PNP Power Transistors | |
BD440 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
BD440 | COMSET |
获取价格 |
SILICON PNP POWER TRANSISTORS | |
BD440 | TRSYS |
获取价格 |
EPITAXIAL SILICON POWER TRANSISTORS | |
BD440 | FAIRCHILD |
获取价格 |
Medium Power Linear and Switching Applications | |
BD440 | STMICROELECTRONICS |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS |