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BD440 PDF预览

BD440

更新时间: 2024-11-28 08:51:23
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 201K
描述
Plastic Encapsulate Transistors

BD440 数据手册

 浏览型号BD440的Datasheet PDF文件第2页 
BD438/BD440/BD442  
PNP Type  
Elektronische Bauelemente  
Plastic Encapsulate Transistors  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
TO-126  
Features  
3.2±  
0.2  
8.0±0.2  
2.0±  
* Amplifier and switching applications  
0.2  
4.14±0.1  
MAXIMUM RATINGS* TA=25oCunless otherwise noted  
O3.2±0.1  
O2.8±0.1  
11.0±0.2  
Symbol  
Parameter  
Value  
Units  
1.4±0.1  
1
2
3
VCBO  
Collector-Base Voltage  
BD438  
BD440  
BD442  
BD438  
BD440  
BD442  
-45  
-60  
V
1.27±0.1  
-80  
15.3±0.2  
VCEO  
Collector-Emitter Voltage  
-45  
0.76±0.1  
-60  
V
2.28 Typ.  
-80  
0.5±  
0.1  
4.55±0.1  
VEBO  
IC  
Emitter-Base Voltage  
-5  
V
A
Collector Current –Continuous  
Collector Dissipation  
-4  
1: Emitter  
2: Collector  
3: Base  
PC  
1.25  
150  
-55-150  
W
TJ  
Junction Temperature  
Storage Temperature  
Tstg  
Dimensions in Millimeters  
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
MIN  
-45  
-60  
-80  
-45  
-60  
-80  
-5  
TYP  
MAX  
UNIT  
Test  
conditions  
IC=-100µA, IE=0  
BD438  
BD440  
BD442  
Collector-base breakdown voltage  
V(BR)CBO  
V
IC=-100mA, IB=0  
IE=-100µA, IC=0  
BD438  
BD440  
BD442  
Collector-emitter breakdown voltage  
V(BR)CEO  
V
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V(BR)EBO  
ICBO  
V
V
V
V
CB=-45V, IE=0  
CB=-60V, IE=0  
CB=-80V, IE=0  
BD438  
BD440  
BD442  
-0.1  
-1  
µA  
µA  
IEBO  
VEB=-5V, IC=0  
30  
20  
15  
85  
40  
40  
25  
15  
V
CE=-5V, IC=-10mA  
BD438  
BD440  
BD442  
hFE(1)  
375  
475  
VCE=-1V, IC=-500mA  
BD438  
BD440/BD442  
DC current gain  
hFE(2)  
VCE=-1V, IC=-2A  
BD438  
BD440  
BD442  
hFE(3)  
-0.7  
-0.8  
-1.1  
-1.5  
IC=-3A, IB=-300mA  
VCE=-1V, IC=-2A  
BD438  
BD440/BD442  
Collector-emitter saturation voltage  
VCE(sat)  
V
BD438  
BD440/BD442  
Base-emitter voltage  
Transition frequency  
VBE  
fT  
V
3
MHz  
VCE=-1V, IC=-250mA, f=1MHz  
http://www.SeCoSGmbH.com/  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  

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