Datasheet > BD442

BD442

更新时间： 2024-11-28 08:51:23

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	515K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

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中文翻译

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数据手册

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BD442 数据手册

BD439 BD441 NPN

BD440 BD442 PNP

Central

Semiconductor Corp.

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BD439, BD440

series types are Complementary Silicon Power

Transistors, manufactured by the epitaxial base process,

designed for medium power, low speed switching

applications.

MARKING: FULL PART NUMBER

TO-126 CASE

MAXIMUM RATINGS: (T =25°C)

BD439

BD440

BD441

BD442

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

CBO

CES

CEO

EBO

5.0

4.0

7.0

1.0

Continuous Collector Current

Peak Collector Current (t≤10ms)

Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

-65 to +150

100

°C

°C/W

Thermal Resistance

3.5

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

100

1.0

UNITS

μA

=Rated V

=5.0V

CBO

CES

EBO

CBO

CEO

I =100mA (BD439, BD440)

CEO

CE(SAT)

BE(ON)

I =100mA (BD441, BD442)

I =2.0A, I =200mA

0.8

1.5

=1.0V, I =2.0A

=5.0V, I =10mA (BD439, BD440)

3.0

=5.0V, I =10mA (BD441, BD442)

=1.0V, I =500mA

=1.0V, I =2.0A (BD439, BD440)

=1.0V, I =2.0A (BD441, BD442)

=1.0V, I =250mA

MHz

R1 (2-February 2009)

中文翻译

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