BD442STU PDF预览

BD442STU

更新时间: 2025-07-24 13:00:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
4页 45K
描述
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL

BD442STU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-126
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.12
最大集电极电流 (IC):4 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):36 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

BD442STU 数据手册

 浏览型号BD442STU的Datasheet PDF文件第2页浏览型号BD442STU的Datasheet PDF文件第3页浏览型号BD442STU的Datasheet PDF文件第4页 
BD440/442  
Medium Power Linear and Switching  
Applications  
Complement to BD439, BD441 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
CBO  
: BD440  
: BD442  
- 60  
- 80  
V
V
CES  
CEO  
EBO  
: BD440  
: BD442  
- 60  
- 80  
V
V
: BD440  
: BD442  
- 60  
- 80  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
- 5  
V
A
I
I
I
- 4  
- 7  
C
*Collector Current (Pulse)  
Base Current  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
36  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 1 50  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
: BD440  
: BD442  
I = - 100mA, I = 0  
-60  
-80  
V
V
C
B
I
Collector Cut-off Current  
Collector Cut-off Current  
: BD440  
: BD442  
V
V
= - 60V, I = 0  
= - 80V, I = 0  
E
- 100  
- 100  
µA  
µA  
CBO  
CB  
CB  
E
I
: BD440  
: BD442  
V
V
= - 60V, V = 0  
- 100  
- 100  
µA  
µA  
CES  
CE  
CE  
BE  
= - 80V, V = 0  
BE  
I
Emitter Cut-off Current  
* DC Current Gain  
V
V
= - 5V, I = 0  
- 1  
mA  
EBO  
EB  
CE  
C
h
: BD440  
: BD442  
: BD440  
: BD442  
: BD440  
: BD442  
= - 5V, I = - 10mA  
20  
15  
40  
40  
25  
15  
140  
140  
140  
140  
FE  
C
V
V
= - 1V, I = - 500mA  
C
CE  
CE  
= - 1V, I = - 2A  
C
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I
= - 2A, I = - 0.2A  
- 0.8  
- 1.5  
V
CE  
C
B
V
(on)  
V
V
= - 5V, I = - 10mA  
-0.58  
V
V
BE  
CE  
CE  
C
= -1 V, I = - 2A  
C
f
Current Gain Bandwidth Product  
V
= - 1V, I = - 250mA  
3
MHz  
T
CE  
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

BD442STU 替代型号

型号 品牌 替代类型 描述 数据表
BD442S FAIRCHILD

完全替代

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD442G ONSEMI

功能相似

Plastic Medium Power Silicon PNP Transistor
BD442LEADFREE CENTRAL

功能相似

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/

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