5秒后页面跳转
BD442 PDF预览

BD442

更新时间: 2024-11-27 22:39:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
4页 45K
描述
Medium Power Linear and Switching Applications

BD442 数据手册

 浏览型号BD442的Datasheet PDF文件第2页浏览型号BD442的Datasheet PDF文件第3页浏览型号BD442的Datasheet PDF文件第4页 
BD440/442  
Medium Power Linear and Switching  
Applications  
Complement to BD439, BD441 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
CBO  
: BD440  
: BD442  
- 60  
- 80  
V
V
CES  
CEO  
EBO  
: BD440  
: BD442  
- 60  
- 80  
V
V
: BD440  
: BD442  
- 60  
- 80  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
- 5  
V
A
I
I
I
- 4  
- 7  
C
*Collector Current (Pulse)  
Base Current  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
36  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 1 50  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
: BD440  
: BD442  
I = - 100mA, I = 0  
-60  
-80  
V
V
C
B
I
Collector Cut-off Current  
Collector Cut-off Current  
: BD440  
: BD442  
V
V
= - 60V, I = 0  
= - 80V, I = 0  
E
- 100  
- 100  
µA  
µA  
CBO  
CB  
CB  
E
I
: BD440  
: BD442  
V
V
= - 60V, V = 0  
- 100  
- 100  
µA  
µA  
CES  
CE  
CE  
BE  
= - 80V, V = 0  
BE  
I
Emitter Cut-off Current  
* DC Current Gain  
V
V
= - 5V, I = 0  
- 1  
mA  
EBO  
EB  
CE  
C
h
: BD440  
: BD442  
: BD440  
: BD442  
: BD440  
: BD442  
= - 5V, I = - 10mA  
20  
15  
40  
40  
25  
15  
140  
140  
140  
140  
FE  
C
V
V
= - 1V, I = - 500mA  
C
CE  
CE  
= - 1V, I = - 2A  
C
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I
= - 2A, I = - 0.2A  
- 0.8  
- 1.5  
V
CE  
C
B
V
(on)  
V
V
= - 5V, I = - 10mA  
-0.58  
V
V
BE  
CE  
CE  
C
= -1 V, I = - 2A  
C
f
Current Gain Bandwidth Product  
V
= - 1V, I = - 250mA  
3
MHz  
T
CE  
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

BD442 替代型号

型号 品牌 替代类型 描述 数据表
BD442S FAIRCHILD

功能相似

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD442STU ONSEMI

功能相似

4.0 A, 80 V PNP Bipolar Power Transistor, 1920-TUBE
BD442G ONSEMI

功能相似

Plastic Medium Power Silicon PNP Transistor

与BD442相关器件

型号 品牌 获取价格 描述 数据表
BD442G ONSEMI

获取价格

Plastic Medium Power Silicon PNP Transistor
BD442LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD442S FAIRCHILD

获取价格

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD442STU FAIRCHILD

获取价格

PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD),
BD442STU ONSEMI

获取价格

4.0 A, 80 V PNP Bipolar Power Transistor, 1920-TUBE
BD449 INFINEON

获取价格

PNP SILICON EPIBASE TRANSISTORS
BD4505N SHUNYE

获取价格

45 AMP BLOCK DIODES
BD4505P SHUNYE

获取价格

45 AMP BLOCK DIODES
BD450M2EFJ-C ROHM

获取价格

BD4xxM2-C系列是45V耐压、输出电压精度±2%、输出电流200mA、消耗电流40µ
BD450M2EFJ-CE2 ROHM

获取价格

Fixed Positive LDO Regulator, 5V, 0.35V Dropout, PDSO8, HTSOP-8