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BD442 PDF预览

BD442

更新时间: 2024-09-23 22:39:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
4页 45K
描述
Medium Power Linear and Switching Applications

BD442 数据手册

 浏览型号BD442的Datasheet PDF文件第2页浏览型号BD442的Datasheet PDF文件第3页浏览型号BD442的Datasheet PDF文件第4页 
BD440/442  
Medium Power Linear and Switching  
Applications  
Complement to BD439, BD441 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
CBO  
: BD440  
: BD442  
- 60  
- 80  
V
V
CES  
CEO  
EBO  
: BD440  
: BD442  
- 60  
- 80  
V
V
: BD440  
: BD442  
- 60  
- 80  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
- 5  
V
A
I
I
I
- 4  
- 7  
C
*Collector Current (Pulse)  
Base Current  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
36  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 1 50  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
: BD440  
: BD442  
I = - 100mA, I = 0  
-60  
-80  
V
V
C
B
I
Collector Cut-off Current  
Collector Cut-off Current  
: BD440  
: BD442  
V
V
= - 60V, I = 0  
= - 80V, I = 0  
E
- 100  
- 100  
µA  
µA  
CBO  
CB  
CB  
E
I
: BD440  
: BD442  
V
V
= - 60V, V = 0  
- 100  
- 100  
µA  
µA  
CES  
CE  
CE  
BE  
= - 80V, V = 0  
BE  
I
Emitter Cut-off Current  
* DC Current Gain  
V
V
= - 5V, I = 0  
- 1  
mA  
EBO  
EB  
CE  
C
h
: BD440  
: BD442  
: BD440  
: BD442  
: BD440  
: BD442  
= - 5V, I = - 10mA  
20  
15  
40  
40  
25  
15  
140  
140  
140  
140  
FE  
C
V
V
= - 1V, I = - 500mA  
C
CE  
CE  
= - 1V, I = - 2A  
C
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I
= - 2A, I = - 0.2A  
- 0.8  
- 1.5  
V
CE  
C
B
V
(on)  
V
V
= - 5V, I = - 10mA  
-0.58  
V
V
BE  
CE  
CE  
C
= -1 V, I = - 2A  
C
f
Current Gain Bandwidth Product  
V
= - 1V, I = - 250mA  
3
MHz  
T
CE  
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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