Datasheet > BD442

BD442

更新时间： 2024-11-28 06:41:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	119K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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BD442 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD440 BD442

DESCRIPTION

·With TO-126 package

·Complement to type BD439,BD441

APPLICATIONS

·For medium power linear and

switching applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-60

-80

-60

-80

-5

UNIT

BD440

BD442

BD440

BD442

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

I_CM

I_B

Emitter -base voltage

Collector current (DC)

Collector current-Peak

Base current

Open collector

-4

-7

-1

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-65~150

T_stg

12 3

中文翻译

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