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BD442 PDF预览

BD442

更新时间: 2024-01-20 20:57:01
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
4页 72K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

BD442 技术参数

是否无铅: 不含铅生命周期:End Of Life
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.32
最大集电极电流 (IC):4 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):36 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

BD442 数据手册

 浏览型号BD442的Datasheet PDF文件第2页浏览型号BD442的Datasheet PDF文件第3页浏览型号BD442的Datasheet PDF文件第4页 
BD439/BD440  
BD441/BD442  
COMPLEMENTARY SILICON POWER TRANSISTORS  
SGS-THOMSON PREFERRED SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
DESCRIPTION  
The BD439 and BD441 are silicon epitaxial-base  
NPN power transistors in Jedec SOT-32 plastic  
package, intented for use in power linear and  
switching applications.  
The complementary PNP types are BD440, and  
BD442 respectively.  
1
2
3
SOT-32  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
BD439  
BD440  
60  
BD441  
BD442  
80  
VCBO  
VCES  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
60  
80  
60  
80  
V
5
V
4
A
ICM  
Collector Peak Current (t 10 ms)  
Base Current  
7
A
IB  
1
36  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc ≤ 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/4  
May 1997  

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