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BD442 PDF预览

BD442

更新时间: 2024-02-05 12:53:38
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 114K
描述
POWER TRANSISTORS PNP SILICON

BD442 技术参数

是否无铅: 不含铅生命周期:End Of Life
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.32
最大集电极电流 (IC):4 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):36 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

BD442 数据手册

 浏览型号BD442的Datasheet PDF文件第2页浏览型号BD442的Datasheet PDF文件第3页浏览型号BD442的Datasheet PDF文件第4页 
Order this document  
by BD438/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for amplifier and switching applications. Complementary types are BD437 and  
BD441.  
4.0 AMPERES  
POWER TRANSISTORS  
PNP SILICON  
CASE 77–08  
TO–225AA TYPE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
BD438  
BD440  
BD442  
V
V
V
45  
60  
80  
Vdc  
CEO  
CBO  
EBO  
BD438  
BD440  
BD442  
45  
60  
80  
Vdc  
Emitter–Base Voltage  
Collector Current  
Base Current  
5.0  
4.0  
1.0  
Vdc  
Adc  
Adc  
I
C
I
B
Total Device Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
36  
288  
Watts  
W/ C  
Operating and Storage Junction Temperature Range  
T , T  
55 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
3.5  
C/W  
JC  
REV 7  
Motorola, Inc. 1995

BD442 替代型号

型号 品牌 替代类型 描述 数据表
BD442G ONSEMI

完全替代

Plastic Medium Power Silicon PNP Transistor
BD442STU ONSEMI

类似代替

4.0 A, 80 V PNP Bipolar Power Transistor, 1920-TUBE
BD681G ONSEMI

类似代替

Plastic Medium−Power Silicon NPN Darlingtons

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