BD681G

更新时间： 2024-01-03 20:54:20

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	383K
描述
Plastic Medium−Power Silicon NPN Darlingtons

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中文翻译

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数据手册
替代型号

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BD681G 数据手册

BD6xxx

Complementary power Darlington transistors

Features

■ Good h linearity

■ High f frequency

■ Monolithic Darlington configuration with

integrated antiparallel collector-emitter diode

Applications

■ Linear and switching industrial equipment

SOT-32

Description

The devices are manufactured in planar base

island technology with monolithic Darlington

configuration.

Figure 1.

Internal schematic diagram

R1 typ.= 15 KΩ

R2 typ.= 100 Ω

Table 1.

Device summary

Order codes

Marking

Package

Packaging

BD677

BD677A

BD678

BD678A

BD679

BD679A

BD680

BD680A

BD681

BD682

BD677

BD677A

BD678

BD678A

BD679

BD679A

BD680

BD680A

BD681

BD682

SOT-32

Tube

January 2008

Rev 5

1/12

www.st.com

12 3 4 5 6 7...12

中文翻译

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BD681G 替代型号

型号	品牌	替代类型	描述	数据表
BD681STU	ONSEMI	类似代替	中等功率 NPN 达林顿双极功率晶体管
BD681	ONSEMI	类似代替	DARLINGTON POWER TRANSISTORS NPN SILICON
BD442	ONSEMI	类似代替	POWER TRANSISTORS PNP SILICON

与BD681G相关器件

型号	品牌	获取价格	描述	数据表
BD681LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
BD681S	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD),
BD681S	ROCHESTER	获取价格	4A, 100V, NPN, Si, POWER TRANSISTOR, TO-126
BD681S	ONSEMI	获取价格	中等功率 NPN 达林顿双极功率晶体管
BD681S_NL	FAIRCHILD	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
BD681STU	FAIRCHILD	获取价格	Medium Power Linear and Switching Applications
BD681STU	ONSEMI	获取价格	中等功率 NPN 达林顿双极功率晶体管
BD682	ONSEMI	获取价格	DARLINGTON POWER TRANSISTORS PNP SILICON
BD682	ISC	获取价格	Silicon PNP Power Transistors
BD682	SAVANTIC	获取价格	Silicon PNP Power Transistors