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BD442 PDF预览

BD442

更新时间: 2024-01-24 03:55:06
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 73K
描述
SILICON PNP POWER TRANSISTORS

BD442 技术参数

是否无铅: 不含铅生命周期:End Of Life
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.32
最大集电极电流 (IC):4 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):36 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

BD442 数据手册

 浏览型号BD442的Datasheet PDF文件第2页浏览型号BD442的Datasheet PDF文件第3页 
BD440 – BD442  
SILICON PNP POWER TRANSISTORS.  
The BD440-BD442 are PNP Transistors mounted in Jedec TO-126 plastic package.  
They are recommended for use in medium power linear and switching applications.  
NPN complements are BD439-BD441.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Collector-Base Voltage (IE= 0)  
Value  
Unit  
BD440  
BD442  
BD440  
BD442  
-60  
-80  
-60  
-80  
-5  
-4  
-7  
-1  
36  
VCBO  
VCEO  
V
Collector-Emitter Voltage (IB= 0)  
V
V
A
VEBO  
IC  
ICM  
IB  
PC  
TJ  
TStg  
Emitter-Base Voltage (Ic= 0)  
Collector Current  
Collector Current Peak  
Base Current  
Total power Dissipation  
Junction Temperature  
Storage Temperature  
A
TC = 25°C  
W
°C  
°C  
150  
-65 to +150  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
Thermal Resistance, Junction-Case  
Thermal Resistance, Junction-ambient in free air  
3.5  
100  
°C/W  
°C/W  
RthJ-c  
RthJ-a  
25/09/2012  
27/08/2012  
COMSET SEMICONDUCTORS  
1 | 3  

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