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BD440 PDF预览

BD440

更新时间: 2024-11-28 12:50:19
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 519K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

BD440 数据手册

 浏览型号BD440的Datasheet PDF文件第2页 
TM  
BD439 BD441 NPN  
BD440 BD442 PNP  
Central  
Semiconductor Corp.  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BD439, BD440  
series types are Complementary Silicon Power  
Transistors, manufactured by the epitaxial base process,  
designed for medium power, low speed switching  
applications.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C)  
BD439  
BD440  
BD441  
BD442  
C
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
60  
60  
60  
80  
80  
80  
V
CBO  
V
V
CES  
CEO  
EBO  
V
V
V
5.0  
4.0  
7.0  
1.0  
36  
V
Continuous Collector Current  
Peak Collector Current (t≤10ms)  
Base Current  
I
A
C
I
A
CM  
I
A
B
Power Dissipation  
P
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
100  
°C  
°C/W  
°C/W  
J
Θ
JA  
JC  
Thermal Resistance  
Θ
3.5  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
1.0  
UNITS  
μA  
μA  
mA  
V
I
I
I
V
V
V
=Rated V  
=Rated V  
=5.0V  
CBO  
CES  
EBO  
CB  
CE  
EB  
CBO  
CEO  
BV  
I =100mA (BD439, BD440)  
60  
80  
CEO  
CEO  
CE(SAT)  
BE(ON)  
FE  
C
BV  
I =100mA (BD441, BD442)  
V
C
V
V
I =2.0A, I =200mA  
0.8  
1.5  
V
C
B
V
=1.0V, I =2.0A  
V
CE  
CE  
CE  
CE  
CE  
CE  
CE  
C
h
h
h
h
h
V
V
V
V
V
V
=5.0V, I =10mA (BD439, BD440)  
20  
15  
40  
25  
15  
3.0  
C
=5.0V, I =10mA (BD441, BD442)  
FE  
C
=1.0V, I =500mA  
FE  
C
=1.0V, I =2.0A (BD439, BD440)  
FE  
C
=1.0V, I =2.0A (BD441, BD442)  
FE  
C
f
=1.0V, I =250mA  
MHz  
T
C
R1 (2-February 2009)  

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