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BD439TIN/LEAD PDF预览

BD439TIN/LEAD

更新时间: 2024-11-28 13:05:55
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 515K
描述
Power Bipolar Transistor,

BD439TIN/LEAD 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.71
JESD-609代码:e0峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Tin/Lead (Sn/Pb)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BD439TIN/LEAD 数据手册

 浏览型号BD439TIN/LEAD的Datasheet PDF文件第2页 
TM  
BD439 BD441 NPN  
BD440 BD442 PNP  
Central  
Semiconductor Corp.  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BD439, BD440  
series types are Complementary Silicon Power  
Transistors, manufactured by the epitaxial base process,  
designed for medium power, low speed switching  
applications.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C)  
BD439  
BD440  
BD441  
BD442  
C
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
60  
60  
60  
80  
80  
80  
V
CBO  
V
V
CES  
CEO  
EBO  
V
V
V
5.0  
4.0  
7.0  
1.0  
36  
V
Continuous Collector Current  
Peak Collector Current (t≤10ms)  
Base Current  
I
A
C
I
A
CM  
I
A
B
Power Dissipation  
P
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
100  
°C  
°C/W  
°C/W  
J
Θ
JA  
JC  
Thermal Resistance  
Θ
3.5  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
1.0  
UNITS  
μA  
μA  
mA  
V
I
I
I
V
V
V
=Rated V  
=Rated V  
=5.0V  
CBO  
CES  
EBO  
CB  
CE  
EB  
CBO  
CEO  
BV  
I =100mA (BD439, BD440)  
60  
80  
CEO  
CEO  
CE(SAT)  
BE(ON)  
FE  
C
BV  
I =100mA (BD441, BD442)  
V
C
V
V
I =2.0A, I =200mA  
0.8  
1.5  
V
C
B
V
=1.0V, I =2.0A  
V
CE  
CE  
CE  
CE  
CE  
CE  
CE  
C
h
h
h
h
h
V
V
V
V
V
V
=5.0V, I =10mA (BD439, BD440)  
20  
15  
40  
25  
15  
3.0  
C
=5.0V, I =10mA (BD441, BD442)  
FE  
C
=1.0V, I =500mA  
FE  
C
=1.0V, I =2.0A (BD439, BD440)  
FE  
C
=1.0V, I =2.0A (BD441, BD442)  
FE  
C
f
=1.0V, I =250mA  
MHz  
T
C
R1 (2-February 2009)  

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