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BD439 PDF预览

BD439

更新时间: 2024-09-24 06:41:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 53K
描述
Plastic Medium Power Silicon NPN Transistor

BD439 数据手册

 浏览型号BD439的Datasheet PDF文件第2页浏览型号BD439的Datasheet PDF文件第3页浏览型号BD439的Datasheet PDF文件第4页 
BD435, BD437, BD439,  
BD441  
Plastic Medium Power  
Silicon NPN Transistor  
This series of plastic, medium−power silicon NPN transistors can be  
used for amplifier and switching applications. Complementary types  
are BD438 and BD442.  
http://onsemi.com  
4.0 AMPERES  
POWER TRANSISTORS  
NPN SILICON  
Features  
Pb−Free Package is Available*  
MAXIMUM RATINGS  
Rating  
Symbol Value  
Unit  
TO−225AA  
CASE 77  
STYLE 1  
Collector−Emitter Voltage  
BD435  
BD437  
BD439  
BD441  
V
CEO  
V
CBO  
V
EBO  
32  
45  
60  
80  
Vdc  
3
2
1
Collector−Base Voltage  
BD435  
BD437  
BD439  
BD441  
32  
45  
60  
80  
Vdc  
MARKING DIAGRAM  
Emitter−Base Voltage  
Collector Current  
Base Current  
5.0  
4.0  
1.0  
Vdc  
Adc  
Adc  
YWW  
BD4xx  
I
C
I
B
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
36  
288  
Watts  
W/°C  
C
xx  
Y
= 35, 37, 39, 41  
= Year  
WW  
= Work Week  
Operating and Storage Junction Temperature  
Range  
T , T  
55 to  
+150  
°C  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
TO−225AA  
TO−225AA  
Shipping  
BD435  
BD437  
BD437G  
500 Units/Box  
500 Units/Box  
500 Units/Box  
THERMAL CHARACTERISTICS  
TO−225AA  
(Pb−Free)  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
q
3.5  
°C/W  
JC  
BD437T  
BD439  
BD441  
TO−225AA  
TO−225AA  
TO−225AA  
500 Units/Rail  
500 Units/Box  
500 Units/Box  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 13  
BD437/D  

BD439 替代型号

型号 品牌 替代类型 描述 数据表
BD439S ONSEMI

类似代替

Medium Power NPN Bipolar Power Transistor
BD439G ONSEMI

类似代替

Plastic Medium Power Silicon NPN Transistor

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