是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.15 |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 36 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 3 MHz |
VCEsat-Max: | 0.8 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BD439S | FAIRCHILD |
功能相似 |
NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), | |
BD439 | FAIRCHILD |
功能相似 |
Medium Power Linear and Switching Applications |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD439S | FAIRCHILD |
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NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), | |
BD439S | ONSEMI |
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BD439TIN/LEAD | CENTRAL |
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BD440 | INFINEON |
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PNP SILICON EPIBASE TRANSISTORS | |
BD440 | CENTRAL |
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COMPLEMENTARY SILICON POWER TRANSISTORS | |
BD440 | SECOS |
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Plastic Encapsulate Transistors | |
BD440 | ISC |
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BD440 | SAVANTIC |
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Silicon PNP Power Transistors | |
BD440 | COMSET |
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SILICON PNP POWER TRANSISTORS | |
BD440 | TRSYS |
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EPITAXIAL SILICON POWER TRANSISTORS |