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BD439

更新时间: 2024-11-27 22:39:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
4页 44K
描述
Medium Power Linear and Switching Applications

BD439 数据手册

 浏览型号BD439的Datasheet PDF文件第2页浏览型号BD439的Datasheet PDF文件第3页浏览型号BD439的Datasheet PDF文件第4页 
BD439/441  
Medium Power Linear and Switching  
Applications  
Complement to BD440, BD442 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
CBO  
: BD439  
: BD441  
60  
80  
V
V
V
CES  
CEO  
EBO  
: BD439  
: BD441  
60  
80  
V
V
V
V
: BD439  
: BD441  
60  
80  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
5
V
A
I
I
I
4
C
*Collector Current (Pulse)  
Base Current  
7
A
CP  
B
1
36  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BD439  
: BD441  
I
= 100mA, I = 0  
60  
80  
V
V
C
B
I
I
I
Collector Cut-off Current  
Collector Cut-off Current  
: BD439  
: BD441  
V
V
= 60V, I = 0  
100  
100  
µA  
µA  
CBO  
CES  
EBO  
CB  
CB  
E
= 80V, I = 0  
E
: BD439  
: BD441  
V
V
= 60V, V = 0  
100  
100  
µA  
µA  
CE  
CE  
BE  
= 80V, V = 0  
BE  
Emitter Cut-off Current  
* DC Current Gain  
V
V
= 5V, I = 0  
1
mA  
EB  
CE  
C
h
: BD439  
: BD441  
: BD439  
: BD441  
: BD439  
: BD441  
= 5V, I = 10mA  
20  
15  
40  
40  
25  
15  
130  
130  
140  
140  
FE  
C
V
V
=1V, I = 500mA  
C
CE  
CE  
= 1V, I = 2A  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
I
= 2A, I = 0.2A  
0.8  
1.5  
V
CE  
BE  
C
B
(on)  
V
V
= 5V, I = 10mA  
0.58  
V
V
CE  
CE  
C
= 1V, I = 2A  
C
f
Current Gain Bandwidth Product  
V
= 1V, I = 250mA  
3
MHz  
T
CE  
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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