Datasheet > BD439

BD439

更新时间： 2024-09-24 08:51:23

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	200K
描述
Plastic Encapsulate Transistors

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中文翻译

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数据手册

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BD439 数据手册

BD439/BD441

NPN Type

Plastic Encapsulate Transistors

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-126

3.2±

0.2

8.0±0.2

Features

2.0±

0.2

4.14±0.1

* Amplifier and switching applications

O3.2±0.1

O2.8±0.1

11.0±0.2

1.4±0.1

MAXIMUM RATINGS* T_A=25 unless otherwise noted

1.27±0.1

Symbol

V_CBO

Paramete

Value

Units

15.3±0.2

Collector-Base Voltage

BD439

BD441

BD439

BD441

0.76±0.1

2.28 Typ.

V_CEO

Collector-Emitter Voltage

0.5±

0.1

4.55±0.1

V_EBO

I_C

Emitter-Base Voltage

1: Emitter

2: Collector

3: Base

Collector Current –Continuous

Collector Dissipation

P_C

1.25

150

-55-150

Dimensions in Millimeters

T_J

Junction Temperature

Storage Temperature

T_stg

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Ic=100μA,I_E=0

BD439

BD441

Collector-base breakdown voltage

V_(BR)CBO

Ic=100mA,I_B=0

BD439

BD441

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V_(BR)CEO

V_(BR)EBO

I_E=100μA,I_C=0

_CB=60V,I_E=0

BD439

BD441

Collector cut-off current

Emitter cut-off current

I_CBO

μA

100

_CB=80V,I_E=0

I_EBO

V_EB=5V,I_E=0

h_FE(1)

475

V_CE=1V,I_C=500mA

V_CE=5V,I_C=10mA

BD439

BD441

h_FE(2)

DC current gain

V_CE=1V,I_C=2A

BD439

BD441

h_FE(3)

V_CE(sat)

V_BE

Collector-emitter saturation voltage

Base-emitter voltage

I_C=3A,I_B=0.3A

0.8

1.1

V_CE=1V,I_C=2A

Transition frequency

MHz

f_T

V_CE=1V,I_C=250mA

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

中文翻译

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