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BD438STU PDF预览

BD438STU

更新时间: 2024-11-29 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管功率双极晶体管
页数 文件大小 规格书
4页 59K
描述
4.0 A, 45 V PNP Power Bipolar Junction Transistor

BD438STU 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95Factory Lead Time:1 week
风险等级:1.17最大集电极电流 (IC):4 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):36 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BD438STU 数据手册

 浏览型号BD438STU的Datasheet PDF文件第2页浏览型号BD438STU的Datasheet PDF文件第3页浏览型号BD438STU的Datasheet PDF文件第4页 
BD436, BD438, BD440,  
BD442  
Plastic Medium Power  
Silicon PNP Transistor  
This series of plastic, medium−power silicon PNP transistors can be  
used for for amplifier and switching applications. Complementary  
types are BD437 and BD441.  
http://onsemi.com  
4.0 AMP POWER  
Features  
TRANSISTORS PNP SILICON  
Pb−Free Packages are Available*  
TO−225AA  
CASE 77  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
BD436  
BD438  
BD440  
BD442  
V
V
V
32  
45  
60  
80  
Vdc  
CEO  
CBO  
EBO  
3
2
1
MARKING DIAGRAM  
Collector−Base Voltage  
BD436  
BD438  
BD440  
BD442  
32  
45  
60  
80  
Vdc  
YWW  
BD4xxG  
Emitter−Base Voltage  
Collector Current  
Base Current  
5.0  
4.0  
1.0  
Vdc  
Adc  
Adc  
I
C
I
B
BD4xx = Device Code  
xx = 36, 36T, 38, 40, 42  
Total Device Dissipation @ T = 25°C  
P
36  
288  
W
W/°C  
C
D
Derate above 25°C  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
Symbol  
Max  
Unit  
Device  
Package  
Shipping  
Thermal Resistance, Junction−to−Case  
q
3.5  
°C/W  
JC  
BD436  
TO−225AA  
500 Units/Box  
500 Units/Box  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
BD436G  
TO−225AA  
(Pb−Free)  
BD436T  
TO−225AA  
50 Units/Rail  
50 Units/Rail  
BD436TG  
TO−225AA  
(Pb−Free)  
BD438  
TO−225AA  
500 Units/Box  
500 Units/Box  
BD438G  
TO−225AA  
(Pb−Free)  
BD440  
TO−225AA  
500 Units/Box  
500 Units/Box  
BD440G  
TO−225AA  
(Pb−Free)  
BD442  
TO−225AA  
500 Units/Box  
500 Units/Box  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
BD442G  
TO−225AA  
(Pb−Free)  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 14  
BD438/D  

BD438STU 替代型号

型号 品牌 替代类型 描述 数据表
BD438S ONSEMI

完全替代

4.0 A, 45 V PNP Power Bipolar Junction Transistor
BD438G ONSEMI

类似代替

Plastic Medium Power Silicon PNP Transistor
BD438 ONSEMI

类似代替

POWER TRANSISTORS PNP SILICON

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Medium Power Linear and Switching Applications