BD438-BP

更新时间： 2024-02-02 07:23:47

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	260K
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中文翻译

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数据手册

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BD438-BP 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

BD434/BD436/BD438

Micro Commercial Components

Features

•

Intended for use in medium power near and switching applications

With TO-126 package

PNP Silicon

Power Transistors

The complementary NPN type is BD433, BD435, BD437

Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

ꢀꢁꢂꢃꢄꢅꢆ

Marking: Type Number

Maximum Ratings

Symbol

V_CEO

Rating

Collector-Emitter Voltage

Rating

-22

Unit

BD434

BD436

BD438

BD434

BD436

BD438

BD434

BD436

BD438

-32

-45

-22

-32

-45

ꢀ

V_CBO

Collector-Base Voltage

Emitter-Base Voltage

V_EBO

ꢀ

-5.0

I_C

P_C

T_J

Collector Current

-4.0

1.25

-55 to +150

Collector power dissipation

Junction Temperature

Storage Temperature

T_STG

-55 to +150

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage

(I_C=-10mAdc, I_B=0)

BD434

BD436

BD438

-22

-32

-45

---

Vdc

V_(BR)CBO

Collector-Base Breakdown Voltage

(I_C=-1mAdc, I_E=0)

BD434

BD436

BD438

-22

-32

-45

---

Vdc

PIN 1.

PIN 2.

PIN 3.

EMITTER

COLLECTOR

BASE

V_(BR)EBO

I_CBO

Emitter-Base Breakdown Voltage

(I_E=-1mAdc, I_C=0)

-5

---

DIMENSIONS

Collector-Base Cutoff Current

(V_CB=-22Vdc,I_E=0)

(V_CB=-32Vdc,I_E=0)

(V_CB=-45Vdc,I_E=0)

Collector-Base Cutoff Current

(V_CE=-22Vdc,I_E=0)

(V_CE=-32Vdc,I_E=0)

(V_CE=-45Vdc,I_E=0)

Emitter-Base Cutoff Current

(V_EB=-5.0Vdc, I_C=0)

BD434

BD436

BD438

---

-100

uAdc

ꢀꢁꢂꢃꢄꢅꢆ

ꢇꢀꢁꢆ

ꢇꢇꢆ

ꢈꢀꢇꢆ

ꢉꢆ

ꢍ

ꢇꢉꢊꢆ

0.307ꢆ

0.433

0.618

ꢎꢏꢐꢒ1

0.126

0.034

0.054

ꢇꢀꢁꢆ

ꢇꢉꢊꢆ

ꢁꢋꢌꢄꢆ

0.291

0.417

0.602

ꢎꢏꢐꢑ4

0.118

0.026

0.046

7.40

10.60

7.80

11.00

15.70

4.10

3.20

0.86

1.37

I_CEO

ꢂꢆ

ꢈꢆ

ꢄꢆ

ꢓ

15.30

3.90

3.00

0.66

1.17

BD434

BD436

BD438

---

-100

-1.0

uAdc

I_EBO

ꢔ

mAdc

ꢕꢆ

0.090TYP

0.098

2.290TYP

ꢖꢆ

0.114

2.50

2.90

2.30

0.30

1.50

0.60

0.083

0.000

0.043

0.091

0.012

0.059

2.10

0.00

1.10

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.

0.018

0.024

0.45

www.mccsemi.com

Revision: A

2011/01/01

1 of 3

12 3

中文翻译

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与BD438-BP相关器件

型号	品牌	获取价格	描述	数据表
BD438-BP-HF	MCC	获取价格	Power Bipolar Transistor,
BD438G	ONSEMI	获取价格	Plastic Medium Power Silicon PNP Transistor
BD438LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD438S	FAIRCHILD	获取价格	Medium Power Linear and Switching Applications
BD438S	ONSEMI	获取价格	4.0 A, 45 V PNP Power Bipolar Junction Transistor
BD438STU	FAIRCHILD	获取价格	PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD),
BD438STU	ONSEMI	获取价格	4.0 A, 45 V PNP Power Bipolar Junction Transistor
BD438TG	ONSEMI	获取价格	Plastic Medium Power Silicon PNP Transistor
BD439	TRSYS	获取价格	EPITAXIAL SILICON POWER TRANSISTORS
BD439	COMSET	获取价格	SILICON NPN POWER TRANSISTORS

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