是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-126 |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.24 |
Is Samacsys: | N | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 22 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 36 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BD434STU | FAIRCHILD |
完全替代 |
FAIRCHILD Small Signal Transistors | |
BD434S_NL | FAIRCHILD |
功能相似 |
Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
BD434 | STMICROELECTRONICS |
功能相似 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD434S_NL | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
BD434STU | FAIRCHILD |
获取价格 |
FAIRCHILD Small Signal Transistors | |
BD435 | FAIRCHILD |
获取价格 |
Medium Power Linear and Switching Applications | |
BD435 | INFINEON |
获取价格 |
PNP SILICON EPIBASE TRANSISTORS | |
BD435 | ONSEMI |
获取价格 |
Plastic Medium Power Silicon NPN Transistor | |
BD435 | NJSEMI |
获取价格 |
Trans GP BJT NPN 32V 4A 3-Pin(3+Tab) SOT-32 Tube | |
BD435 | WINNERJOIN |
获取价格 |
TRANSISTOR (NPN) | |
BD435 | TYSEMI |
获取价格 |
Medium Power Linear and Switching Applications Base current IB 1 A | |
BD435 | TRSYS |
获取价格 |
EPITAXIAL SILICON POWER TRANSISTORS | |
BD435 | MCC |
获取价格 |
NPN Silicon Power Transistors |