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BD435 PDF预览

BD435

更新时间: 2024-11-03 22:27:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管局域网
页数 文件大小 规格书
5页 46K
描述
Medium Power Linear and Switching Applications

BD435 数据手册

 浏览型号BD435的Datasheet PDF文件第2页浏览型号BD435的Datasheet PDF文件第3页浏览型号BD435的Datasheet PDF文件第4页浏览型号BD435的Datasheet PDF文件第5页 
BD433/435/437  
Medium Power Linear and Switching  
Applications  
Complement to BD434, BD436 and BD438 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
CBO  
: BD433  
: BD435  
: BD437  
22  
32  
45  
V
V
V
V
CES  
CEO  
EBO  
: BD433  
: BD435  
: BD437  
22  
32  
45  
V
V
V
V
V
: BD433  
: BD435  
: BD437  
22  
32  
45  
V
V
V
Emitter-Base Voltage  
Collector Current (DC)  
5
V
A
I
I
I
4
C
*Collector Current (Pulse)  
Base Current  
7
A
CP  
B
1
36  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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