Datasheet > BD436

BD436

更新时间： 2024-11-05 18:09:55

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科信 - KEXIN		/
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1页	59K
描述
PNP Transistor

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中文翻译

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数据手册

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BD436 数据手册

SDMIPDTTyyppee

TransistIoCrs

PNP Epitaxial Silicon Transistor

BD436

Features

1 EMITTER

Medium Power Linear and Switching Applications

2 COLLECTOR

3 BASE

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse) *

Base Current

Symbol

V^CBO

V^CES

V^CEO

V^EBO

I^C

Rating

Unit

-32

-5

-4

I^CP

-7

-1

I^B

P^C

Collector Dissipation (TC=25

Junction Temperature

Storage Temperature

)

T^J

150

TSTG

-65 to 150

* Pulse Test: PW=300ìs, duty Cycle=1.5% Pulsed

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-32

Typ

Max

Unit

Collector-Emitter Sustaining Voltage

Base-Emitter ON Voltage *

Collector Cut-off Current

Emitter Cut-off Current

V^CEO

V^BE(on)

I^CBO

IC = -100mA, IB = 0

VCE = -1V, IC = -2A

VCB = -32V, IE = 0

-1.1

-100

-1

I^CEO

VCE = -32V, VBE = 0

VEB = -5V, IC = 0

I^EBO

V^CE= -5V, IC = -10mA

V^CE= -1V, IC = -500mA

V^CE= -1V, IC = -2A

IC = -2A, IB = -0.2A

VCE = -1V, IC = -250mA

300

DC Current Gain *

h^FE

140

-0.2

Collector-Emitter Saturation Voltage *

Transition frequency

V^CE(sat)

f^T

-0.5

MHz

* Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed

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