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BD435S_11 PDF预览

BD435S_11

更新时间: 2024-11-13 12:51:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
5页 128K
描述
NPN Epitaxial Silicon Transistor

BD435S_11 数据手册

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July 2011  
BD433/435/437  
NPN Epitaxial Silicon Transistor  
Features  
• Medium Power Linear and Switching Applications  
• Complement to BD434, BD436 and BD438 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
Ordering Information  
Part Number  
BD433S  
Marking  
BD433  
BD435  
BD435  
BD437  
Package  
TO-126  
TO-126  
TO-126  
TO-126  
Packing Method  
Remarks  
BULK  
BULK  
RAIL  
BD435S  
BD435STU  
BD437S  
BULK  
* The suffix "S" of FSID denotes TO126 package.  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VCBO  
Parameter  
Collector-Base Voltage  
Value  
Units  
: BD433  
: BD435  
: BD437  
22  
32  
45  
V
V
V
VCES  
Collector-Emitter Voltage  
: BD433  
: BD435  
: BD437  
22  
32  
45  
V
V
V
VCEO  
Collector-Emitter Voltage  
: BD433  
: BD435  
: BD437  
22  
32  
45  
V
V
V
VEBO  
IC  
ICP  
IB  
Emitter-Base Voltage  
5
4
V
A
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
7
A
1
A
PC  
Collector Dissipation (TC = 25°C)  
Junction Temperature  
Storage Temperature  
36  
150  
W
°C  
°C  
TJ  
TSTG  
- 65 to 150  
© 2011 Fairchild Semiconductor Corporation  
BD433/435/437 Rev. B0  
www.fairchildsemi.com  
1

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