Datasheet > BD435S_11

BD435S_11

更新时间： 2024-11-04 12:51:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	128K
描述
NPN Epitaxial Silicon Transistor

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数据手册

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BD435S_11 数据手册

July 2011

BD433/435/437

NPN Epitaxial Silicon Transistor

Features

• Medium Power Linear and Switching Applications

• Complement to BD434, BD436 and BD438 respectively

TO-126

1. Emitter 2.Collector 3.Base

Ordering Information

Part Number

BD433S

Marking

BD433

BD435

BD437

Package

TO-126

Packing Method

Remarks

BULK

RAIL

BD435S

BD435STU

BD437S

BULK

* The suffix "S" of FSID denotes TO126 package.

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_CBO

Parameter

Collector-Base Voltage

Value

Units

: BD433

: BD435

: BD437

V_CES

Collector-Emitter Voltage

: BD433

: BD435

: BD437

V_CEO

Collector-Emitter Voltage

: BD433

: BD435

: BD437

V_EBO

I_C

I_CP

I_B

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current

P_C

Collector Dissipation (T_C= 25°C)

Junction Temperature

Storage Temperature

150

°C

T_J

T_STG

- 65 to 150

BD433/435/437 Rev. B0

www.fairchildsemi.com

12 3 4 5

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与BD435S_11相关器件

型号	品牌	获取价格	描述	数据表
BD435STU	ONSEMI	获取价格	Medium Power NPN Bipolar Power Transistor
BD435STU	FAIRCHILD	获取价格	Power Bipolar Transistor, 4A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD435STU_11	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
BD435STU_NL	FAIRCHILD	获取价格	Power Bipolar Transistor, 4A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD436	INFINEON	获取价格	PNP SILICON EPIBASE TRANSISTORS
BD436	COMSET	获取价格	SILICON PNP POWER TRANSISTORS
BD436	ONSEMI	获取价格	Plastic Medium Power Silicon PNP Transistor
BD436	MCC	获取价格	PNP Silicon Power Transistors
BD436	TRSYS	获取价格	EPITAXIAL SILICON POWER TRANSISTORS
BD436	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS