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BD436 PDF预览

BD436

更新时间: 2024-01-07 17:04:42
品牌 Logo 应用领域
TRSYS 晶体晶体管
页数 文件大小 规格书
3页 70K
描述
EPITAXIAL SILICON POWER TRANSISTORS

BD436 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-225AA包装说明:ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.09最大集电极电流 (IC):4 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-225AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):36 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BD436 数据手册

 浏览型号BD436的Datasheet PDF文件第2页浏览型号BD436的Datasheet PDF文件第3页 
Transys  
Electronics  
L
I M I T E D  
EPITAXIAL SILICON POWER TRANSISTORS  
BD433  
BD435  
BD437  
BD439  
BD441  
NPN  
BD434  
BD436  
BD438  
BD440  
BD442  
PNP  
E
C
B
TO126  
Plastic Package  
Intended for use in Medium Power Linear and Switching Applications  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
SYMBOL  
BD433  
BD434  
22  
BD435  
BD436  
32  
BD437  
BD438  
45  
BD439  
BD440  
60  
BD441  
BD442  
80  
UNIT  
VCBO  
VCES  
VCEO  
VEBO  
IC  
V
V
V
V
A
A
A
Collector Base Voltage  
Collector Emitter Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
45  
45  
60  
60  
22  
22  
32  
32  
80  
80  
5.0  
4.0  
7.0  
1.0  
Collector Current  
ICM  
Collector Peak Current (t=10ms  
IB  
Base Current  
Total Dissipation @ TC=25ºC  
Total Dissipation @ Ta=25ºC  
Derate above 25ºC  
PD  
PD  
W
36.0  
W
1.25  
10  
mW/ ºC  
Operating and Storage  
Junction Temperature Range  
Tj, Tstg  
- 65 to 150  
ºC  
THERMAL RESISTANCE  
Junction to Case  
Rth (j-c)  
Rth (j-a)  
ºC/W  
ºC/W  
3.5  
Junction to Ambient in free air  
100  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
TEST CONDITION  
DESCRIPTION  
SYMBOL  
BD433 BD435 BD437 BD439 BD441  
BD434 BD436 BD438 BD440 BD442  
UNIT  
VCB=Rated VCBO, IE=0  
VBE=0, VCE=Rated VCES  
VEB=5V, IC=0  
ICBO  
ICES  
Collector Cut off Current  
Collector Cut off Current  
Emitter Cut off Current  
<100 <100 <100  
<100 <100 <100  
<100  
<100  
<1.0  
>60  
<100  
<100  
<1.0  
>80  
mA  
mA  
mA  
V
IEBO  
<1.0  
>22  
<1.0  
>32  
<1.0  
>45  
IC=100mA, IB=0  
*VCEO (sus)  
Collector Emitter Sustaining  
Voltage  
IC=2.0A, IB=0.2A  
*VCE (sat)  
<0.5  
<0.5  
<0.6  
<0.8  
<0.8  
V
Collector Emitter Saturation  
Voltage  
IC=10mA, VCE=5V ALL  
*VBE (on)  
Base Emitter On Voltage  
typ 0.58  
<1.2  
V
V
IC=2.0A, VCE=1V  
<1.1  
<1.1  
<1.5  
<1.5  

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