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BD436 PDF预览

BD436

更新时间: 2024-11-04 06:41:51
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 119K
描述
Silicon PNP Power Transistors

BD436 数据手册

 浏览型号BD436的Datasheet PDF文件第2页浏览型号BD436的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
BD434/436/438  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type BD433/435/437  
APPLICATIONS  
·For medium power linear and  
switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VAL
-22  
-32  
-45  
-22  
-32  
-45  
-5  
UNIT  
BD434  
BD436  
BD438  
BD434  
BD436  
BD438  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
ICM  
IB  
Emitter -base voltage  
Collector current (DC)  
Collector current-Peak  
Base current  
Open collector  
V
A
-4  
-7  
A
-1  
A
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
36  
W
150  
-65~150  
Tstg  

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