Datasheet > BD435

BD435

更新时间： 2024-11-28 12:55:47

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管局域网
页数	文件大小	规格书
1页	102K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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BD435 数据手册

RoHS

BD433/435/437

BD433/435/437 TRANSISTOR (NPN)

TO-126

FEATURES

Power dissipation

P_CM:

1.25

W (Tamb=25℃)

1. EMITTER

Collector current

I_CM:

2. COLLECTOR

3. BASE

1 2 3

Collector-base voltage

V_(BR)CBO

BD433

22 V

BD435 32 V

BD437 45 V

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

BD433

V_(BR)CBO

Collector-base breakdown voltage

Ic=100µA, I_E=0

BD435

BD437

BD433

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=100mA, I_B=0

BD435

BD437

I_E=100µA, I_C=0

_CB=22V, I_E=0

BD433

BD435

V_CB=32V, I_E=0

V_CB=45V, I_E=0

µA

BD437

BD433

BD435

V_CE=22V, I_E=0

I_CEO

V_CE=32V, I_E=0

V_CE=45V, I_E=0

V_EB=5V, I_E=0

µA

Collector cut-off current

Emitter cut-off current

BD437

I_EBO

h_FE(1)

_CE=1V, I_C=500mA

V_CE=5V, I_C=10mA BD433/BD435

BD437

h_FE(2)

DC current gain

V_CE=1V, I_C=2A

BD433/BD435

BD437

h_FE(3)

WEJ ELECTRONIC CO.,LTD

I_C=2A, I_B=0.2A

V_CE=1V, I_C=2A

BD433/BD435

0.5

0.6

1.1

1.2

V_CE(sat)

Collector-emitter saturation voltage

BD437

BD433/BD435

BD437

V_BE

Base-emitter voltage

MHz

Transition frequency

f_T

V_CE=1V, I_C=250mA

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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