Datasheet > BD435

BD435

更新时间： 2024-11-28 08:51:23

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管局域网
页数	文件大小	规格书
3页	254K
描述
NPN Silicon Power Transistors

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中文翻译

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数据手册

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BD435 数据手册

M C C

Micro Commercial Components

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

BD433/BD435/BD437

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

NPN Silicon

Power Transistors

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

•

Intended for use in medium power near and switching applications

With TO-126 package

The complementary PNP type is BD434, BD436, BD438

ꢀꢁꢂꢃꢄꢅꢆ

Maximum Ratings

Symbol

V_CEO

Parameter

Collector-Emitter Voltage

Rating

Unit

BD433

BD435

BD437

BD433

BD435

BD437

BD433

BD435

BD437

ꢀ

V_CBO

Collector-Base Voltage

Emitter-Base Voltage

ꢀ

V_EBO

5.0

I_C

P_C

T_J

Collector Current

4.0

1.25

-55 to +150

Collector power dissipation

Junction Temperature

Storage Temperature

T_STG

-55 to +150

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage

(I_C=100mAdc, I_B=0)

BD433

BD435

BD437

---

Vdc

V_(BR)CBO

Collector-Base Breakdown Voltage

---

(I_C=100IAdc, I_E=0)

BD433

BD435

BD437

Vdc

PIN 1.

PIN 2.

PIN 3.

EMITTER

COLLECTOR

BASE

V_(BR)EBO

I_CBO

Emitter-Base Breakdown Voltage

(I_E=100IAdc, I_C=0)

---

DIMENSIONS

Collector-Base Cutoff Current

ꢀꢁꢂꢃꢄꢅꢆ

ꢇꢀꢁꢆ

ꢇꢇꢆ

ꢇꢀꢁꢆ

7.40

(V_CB=22Vdc,I_E=0)

(V_CB=32Vdc,I_E=0)

(V_CB=45Vdc,I_E=0)

BD433

BD435

BD437

ꢈꢀꢇꢆ

ꢉꢆ

ꢍ

ꢇꢉꢊꢆ

0.307ꢆ

0.433

0.618

ꢎꢏꢐꢒ1

0.126

0.034

0.054

ꢇꢉꢊꢆ

ꢁꢋꢌꢄꢆ

---

1.0

uAdc

0.291

0.417

0.602

ꢎꢏꢐꢑ4

0.118

0.026

0.046

7.80

11.00

15.70

4.10

3.20

0.86

1.37

10.60

15.30

3.90

3.00

0.66

1.17

ꢂꢆ

ꢈꢆ

ꢄꢆ

ꢓ

I_CEO

Collector-Base Cutoff Current

(V_CE=22Vdc,I_E=0)

(V_CE=32Vdc,I_E=0)

(V_CE=45Vdc,I_E=0)

BD433

BD435

BD437

---

uAdc

ꢔ

ꢕꢆ

0.090TYP

0.098

2.290TYP

2.50 2.90

2.30

0.30

1.50

0.60

I_EBO

Emitter-Base Cutoff Current

(V_EB=5.0Vdc, I_C=0)

1.0

ꢖꢆ

0.114

0.083

0.000

0.043

0.091

0.012

0.059

2.10

0.00

1.10

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.

0.018

0.024

0.45

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Revision: A

2011/01/01

1 of 3

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中文翻译

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与BD435相关器件

型号	品牌	获取价格	描述	数据表
BD435_05	ONSEMI	获取价格	Plastic Medium Power Silicon NPN Transistor
BD435G	ONSEMI	获取价格	Plastic Medium Power Silicon NPN Transistor
BD435LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD435P	MCC	获取价格	TRANSISTOR 4 A, 32 V, NPN, Si, POWER TRANSISTOR, TO-126, PLASTIC PACKAGE-3, BIP General Pu
BD435S	ONSEMI	获取价格	Medium Power NPN Bipolar Power Transistor
BD435S	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD),
BD435S_11	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
BD435STU	ONSEMI	获取价格	Medium Power NPN Bipolar Power Transistor
BD435STU	FAIRCHILD	获取价格	Power Bipolar Transistor, 4A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD435STU_11	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor

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