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BD434S_NL PDF预览

BD434S_NL

更新时间: 2024-11-04 13:05:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率双极晶体管局域网
页数 文件大小 规格书
5页 46K
描述
Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE PACKAGE-3

BD434S_NL 技术参数

生命周期:Obsolete零件包装代码:SIP
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.25最大集电极电流 (IC):4 A
集电极-发射极最大电压:22 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

BD434S_NL 数据手册

 浏览型号BD434S_NL的Datasheet PDF文件第2页浏览型号BD434S_NL的Datasheet PDF文件第3页浏览型号BD434S_NL的Datasheet PDF文件第4页浏览型号BD434S_NL的Datasheet PDF文件第5页 
BD434/436/438  
Medium Power Linear and Switching  
Applications  
Complement to BD433, BD435 and BD437 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
CBO  
: BD434  
: BD436  
: BD438  
- 22  
- 32  
- 45  
V
V
V
V
CES  
CEO  
EBO  
: BD434  
: BD436  
: BD438  
- 22  
- 32  
- 45  
V
V
V
V
V
: BD434  
: BD436  
: BD438  
- 22  
- 32  
- 45  
V
V
V
Emitter-Base Voltage  
Collector Current (DC)  
- 5  
- 4  
V
A
I
I
I
C
*Collector Current (Pulse)  
Base Current  
- 7  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
36  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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