Datasheet > BD435

BD435

更新时间： 2024-11-04 06:41:51

品牌	Logo	应用领域
TRSYS		晶体晶体管局域网
页数	文件大小	规格书
3页	70K
描述
EPITAXIAL SILICON POWER TRANSISTORS

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中文翻译

获取价格

数据手册

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BD435 数据手册

Transys

Electronics

I M I T E D

EPITAXIAL SILICON POWER TRANSISTORS

BD433

BD435

BD437

BD439

BD441

NPN

BD434

BD436

BD438

BD440

BD442

PNP

TO126

Plastic Package

Intended for use in Medium Power Linear and Switching Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

BD433

BD434

BD435

BD436

BD437

BD438

BD439

BD440

BD441

BD442

UNIT

V_CBO

V_CES

V_CEO

V_EBO

I_C

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

5.0

4.0

7.0

1.0

Collector Current

I_CM

Collector Peak Current (t=10ms

I_B

Base Current

Total Dissipation @ T_C=25ºC

Total Dissipation @ T_a=25ºC

Derate above 25ºC

P_D

36.0

1.25

mW/ ºC

Operating and Storage

Junction Temperature Range

T_j, T_stg

- 65 to 150

ºC

THERMAL RESISTANCE

Junction to Case

R_{th (j-c)}

R_{th (j-a)}

ºC/W

3.5

Junction to Ambient in free air

100

ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)

TEST CONDITION

DESCRIPTION

SYMBOL

BD433 BD435 BD437 BD439 BD441

BD434 BD436 BD438 BD440 BD442

UNIT

V_CB=Rated V_CBO,I_E=0

V_BE=0, V_CE=Rated V_CES

V_EB=5V_,I_C=0

I_CBO

I_CES

Collector Cut off Current

Emitter Cut off Current

<100 <100 <100

<100

<1.0

>60

<100

<1.0

>80

I_EBO

<1.0

>22

<1.0

>32

<1.0

>45

I_C=100mA, I_B=0

*V_{CEO (sus)}

Collector Emitter Sustaining

Voltage

I_C=2.0A, I_B=0.2A

*V_{CE (sat)}

<0.5

<0.6

<0.8

Collector Emitter Saturation

Voltage

I_C=10mA, V_CE=5V ALL

*V_{BE (on)}

Base Emitter On Voltage

typ 0.58

<1.2

I_C=2.0A, V_CE=1V

<1.1

<1.5

12 3

中文翻译

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与BD435相关器件

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BD435STU_11	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor