Datasheet > BD435

BD435

更新时间： 2024-11-28 12:53:47

品牌	Logo	应用领域
TYSEMI		晶体开关晶体管局域网
页数	文件大小	规格书
1页	99K
描述
Medium Power Linear and Switching Applications Base current IB 1 A

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BD435 数据手册

Product specification

BD435

Features

Medium Power Linear and Switching Applications

1 EMITTER

2 COLLECTOR

3 BASE

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (Pulse)

Base current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

I^CP

I^B

Collector dissipation

P^C

Junction temperature

Storage temperature range

150

T^stg

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Collector-emitterSustainingVoltage

CollectorCut-offCurrent

Symbol

V_CEO(SUS)

I_CBO

Testconditons

Min

Typ Max

Unit

I^C= 100 mA, I^B= 0

V_{CB = 32 V, IE = 0}

V_{CE = 32 V, VBE = 0}

V^EB= 5 V, I^C= 0

3 2

ì A

1 0 0

ì A

CollectorCut-offCurrent

EmitterCut-offCurrent

I^CEO

I^EBO

m A

V^CE= 5 V, I^C=10mA

130

DCCurrentGain

h^FE

V^CE= 1 V ,I^C= 500mA

140

V^CE= 1 V, I^C= 2 A

5 0

Collector-emittersaturationvoltage

CE (sat)

I^C= 2 A, I^B=0.2A

0.5

0.2

Base-EmitterONVoltage

V_{BE (on)}

f^T

V^CE= 1 V, I^C= 2 A

1 . 1

CurrentGainBandwidthProduct

V^CE= 1 V, I^C=250mA

MHz

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