生命周期: | Obsolete | 零件包装代码: | SOT-89 |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.12 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 60 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 2000 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 170 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCV61 | NXP |
获取价格 |
NPN general purpose double transistor | |
BCV61 | INFINEON |
获取价格 |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and V | |
BCV61 | TYSEMI |
获取价格 |
High current gain Low collector-emitter saturation voltage | |
BCV61 | NEXPERIA |
获取价格 |
NPN general-purpose double transistorsProduction | |
BCV61 | BL Galaxy Electrical |
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30V,0.1A,Medium Power NPN Bipolar Transistor | |
BCV61 | KEXIN |
获取价格 |
Dual NPN Transistor | |
BCV61,215 | ETC |
获取价格 |
TRANS NPN 30V 100MA DUAL SOT143B | |
BCV61,235 | NXP |
获取价格 |
BCV61 - NPN general-purpose double transistors SOT-143 4-Pin | |
BCV61/T3 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, B | |
BCV61_07 | INFINEON |
获取价格 |
NPN Silicon Double Transistor |