Datasheet > BCV61_07

BCV61_07

更新时间： 2024-11-19 08:50:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	177K
描述
NPN Silicon Double Transistor

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中文翻译

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数据手册

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BCV61_07 数据手册

BCV61

NPN Silicon Double Transistor

• To be used as a current mirror

• Good thermal coupling and V matching

• High current gain

• Low collector-emitter saturation voltage

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

C1 (2)

C2 (1)

Tr.1

Tr.2

E1 (3)

E2 (4)

EHA00012

Type

Marking

1Js

1Ks

Pin Configuration

Package

BCV61

BCV61B

BCV61C

1 = C2 2 = C1 3 = E1 4 = E2 SOT143

1Ls

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

(transistor T1)

CEO

CBO

EBS

Collector-base voltage (open emitter)

(transistor T1)

Emitter-base voltage

100

200

300

150

DC collector current

Peak collector current

Base peak current (transistor T1)

Total power dissipation, T = 99 °C

Junction temperature

Storage temperature

°C

tot

-65 ... 150

stg

Pb-containing package may be available upon special request

2007-08-09

12 3 4 5 6 7

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与BCV61_07相关器件

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BCV61A	INFINEON	获取价格	NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and V
BCV61A	NEXPERIA	获取价格	NPN general-purpose double transistorsProduction
BCV61A	TYSEMI	获取价格	High current gain Low collector-emitter saturation voltage
BCV61A	NXP	获取价格	NPN general purpose double transistor
BCV61A	BL Galaxy Electrical	获取价格	30V,0.1A,Medium Power NPN Bipolar Transistor
BCV61-A	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-143
BCV61A,215	NXP	获取价格	BCV61 - NPN general-purpose double transistors SOT-143 4-Pin
BCV61A-E6327	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
BCV61A-E6433	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
BCV61AT/R	NXP	获取价格	TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, B