是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.07 |
其他特性: | FOR TRANSISTOR2 HFE IS 200 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 30 V |
配置: | COMMON BASE, 2 ELEMENTS | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
元件数量: | 2 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
VCEsat-Max: | 0.6 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCV61B-E6327 | INFINEON |
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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | |
BCV61BT/R | NXP |
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TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, B | |
BCV61B-TAPE-13 | NXP |
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TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV61B-TAPE-7 | NXP |
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TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV61C | NXP |
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NPN general purpose double transistor | |
BCV61C | INFINEON |
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NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and V | |
BCV61C | NEXPERIA |
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NPN general-purpose double transistorsProduction | |
BCV61C | TYSEMI |
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High current gain Low collector-emitter saturation voltage | |
BCV61C | BL Galaxy Electrical |
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30V,0.1A,Medium Power NPN Bipolar Transistor | |
BCV61C | MCC |
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Tape&Reel: 3Kpcs/Reel; |