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BCV61B/T3 PDF预览

BCV61B/T3

更新时间: 2024-11-19 19:52:59
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管晶体管
页数 文件大小 规格书
13页 138K
描述
TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal

BCV61B/T3 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.07
其他特性:FOR TRANSISTOR2 HFE IS 200外壳连接:COLLECTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:COMMON BASE, 2 ELEMENTS最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
元件数量:2端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.6 VBase Number Matches:1

BCV61B/T3 数据手册

 浏览型号BCV61B/T3的Datasheet PDF文件第2页浏览型号BCV61B/T3的Datasheet PDF文件第3页浏览型号BCV61B/T3的Datasheet PDF文件第4页浏览型号BCV61B/T3的Datasheet PDF文件第5页浏览型号BCV61B/T3的Datasheet PDF文件第6页浏览型号BCV61B/T3的Datasheet PDF文件第7页 
BCV61  
NPN general-purpose double transistors  
Rev. 04 — 18 December 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN general-purpose double transistors in a small SOT143B Surface-Mounted  
Device (SMD) plastic package.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
PNP complement  
JEITA  
BCV61  
SOT143B  
-
BCV62  
BCV61A  
BCV61B  
BCV61C  
BCV62A  
BCV62B  
BCV62C  
1.2 Features  
„ Low current (max. 100 mA)  
„ Low voltage (max. 30 V)  
„ Matched pairs  
1.3 Applications  
„ Applications with working point independent of temperature  
„ Current mirrors  
2. Pinning information  
Table 2.  
Pinning  
Pin  
Description  
Simplified outline  
Graphic symbol  
1
collector TR2;  
base TR1 and TR2  
4
3
4
3
2
3
4
collector TR1  
emitter TR1  
emitter TR2  
TR2  
TR1  
1
2
1
2
006aaa842  

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