Datasheet > BCV61CQ62702-C2157

BCV61CQ62702-C2157

更新时间： 2024-11-22 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	97K
描述
TRANSISTOR DUAL SOT 143 5ST

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BCV61CQ62702-C2157 数据手册

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BCV 61

NPN Silicon Double Transistor

• To be used as a current mirror

• Good thermal coupling and V matching

• High current gain

• Low collector-emitter saturation voltage

C1 (2)

C2 (1)

Tr.2

VPS05178

Tr.1

E1 (3)

E2 (4)

EHA00012

Type

Marking

1Js

1Ks

Pin Configuration

Package

BCV 61A

BCV 61B

BCV 61C

1 = C2 2 = C1 3 = E1 4 = E2 SOT-143

1Ls

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

(transistor T1)

CEO

CBO

EBS

Collector-base voltage (open emitter)

(transistor T1)

Emitter-base voltage

DC collector current

100

Peak collector current

200

Base peak current (transistor T1)

200

300

150

°C

Total power dissipation, T = 99 °C

Junction temperature

tot

Storage temperature

-65 ... 150

stg

Thermal Resistance

Junction ambient

K/W

≤240

≤170

thJA

Junction - soldering point

thJS

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm Cu

Sep-30-1999

12 3 4 5

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