是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 包装说明: | PLASTIC PACKAGE-4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.16 | Is Samacsys: | N |
其他特性: | FOR TRANSISTOR2 HFE IS 125 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 30 V |
配置: | CURRENT MIRROR | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | VCEsat-Max: | 0.65 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCV62A,215 | ETC |
获取价格 |
TRANS PNP 30V 100MA DUAL SOT143B | |
BCV62A,235 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General | |
BCV62A-E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon | |
BCV62AE6327HTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 2-Element, PNP, Silicon, ROHS CO | |
BCV62A-E6433 | INFINEON |
获取价格 |
暂无描述 | |
BCV62AT/R | ETC |
获取价格 |
TRANSISTOR | BJT | ARRAY | BLDG BLOCK | 30V V(BR)CEO | 100MA I(C) | SOT-143 | |
BCV62A-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV62A-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV62B | NEXPERIA |
获取价格 |
PNP general-purpose double transistorsProduction | |
BCV62B | NXP |
获取价格 |
PNP general purpose double transistor |