是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.59 |
Is Samacsys: | N | 其他特性: | FOR TRANSISTOR2 HFE IS 125 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 30 V | 配置: | CURRENT MIRROR |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCV62A,215 | ETC |
获取价格 |
TRANS PNP 30V 100MA DUAL SOT143B | |
BCV62A,235 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General | |
BCV62A-E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon | |
BCV62AE6327HTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 2-Element, PNP, Silicon, ROHS CO | |
BCV62A-E6433 | INFINEON |
获取价格 |
暂无描述 | |
BCV62AT/R | ETC |
获取价格 |
TRANSISTOR | BJT | ARRAY | BLDG BLOCK | 30V V(BR)CEO | 100MA I(C) | SOT-143 | |
BCV62A-TAPE-13 | NXP |
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TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV62A-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV62B | NEXPERIA |
获取价格 |
PNP general-purpose double transistorsProduction | |
BCV62B | NXP |
获取价格 |
PNP general purpose double transistor |