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BCV62A PDF预览

BCV62A

更新时间: 2024-12-01 11:10:51
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管晶体管
页数 文件大小 规格书
14页 796K
描述
PNP general-purpose double transistorsProduction

BCV62A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.59
Is Samacsys:N其他特性:FOR TRANSISTOR2 HFE IS 125
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:CURRENT MIRROR
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BCV62A 数据手册

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BCV62  
PNP general-purpose double transistors  
Rev. 4 — 26 July 2010  
Product data sheet  
1. Product profile  
1.1 General description  
PNP general-purpose double transistors in a small SOT143B Surface-Mounted  
Device (SMD) plastic package.  
Table 1.  
Product overview  
Type number  
Package  
Nexperia  
SOT143B  
NPN complement  
JEITA  
BCV62  
-
BCV61  
BCV62A  
BCV62B  
BCV62C  
BCV61A  
BCV61B  
BCV61C  
1.2 Features and benefits  
„ Low current (max. 100 mA)  
„ Low voltage (max. 30 V)  
„ Matched pairs  
„ AEC-Q101 qualified  
„ Small SMD plastic package  
1.3 Applications  
„ Applications with working point independent of temperature  
„ Current mirrors  
1.4 Quick reference data  
Table 2.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
Per transistor  
VCEO collector-emitter voltage  
IC collector current  
Transistor TR1  
hFE DC current gain  
open base  
-
-
-
-
30  
V
100 mA  
VCE = 5 V; IC = 100 μA  
VCE = 5 V; IC = 2 mA  
100  
100  
-
-
-
800  

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