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BCV62B PDF预览

BCV62B

更新时间: 2024-11-22 22:36:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
5页 98K
描述
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)

BCV62B 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:End Of Life零件包装代码:SOT-143
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.11Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:CURRENT MIRROR
最小直流电流增益 (hFE):220JESD-30 代码:R-PDSO-G4
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
参考标准:AEC-Q101表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

BCV62B 数据手册

 浏览型号BCV62B的Datasheet PDF文件第2页浏览型号BCV62B的Datasheet PDF文件第3页浏览型号BCV62B的Datasheet PDF文件第4页浏览型号BCV62B的Datasheet PDF文件第5页 
PNP Silicon Double Transistors  
BCV 62  
Preliminary Data  
To be used as a current mirror  
Good thermal coupling and VBE matching  
High current gain  
Low emitter-saturation voltage  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
BCV 62 A  
BCV 62 B  
BCV 62 C  
3Js  
3Ks  
3Ls  
Q62702-C2158  
Q62702-C2159  
Q62702-C2160  
SOT-143  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
(transistor T1)  
V
V
V
CE0  
CB0  
EBS  
30  
V
Collector-base voltage (open emitter)  
(transistor T1)  
30  
Emitter-base voltage  
6
Collector current  
I
I
I
C
100  
mA  
Collector peak current  
Base peak current (transistor T1)  
CM  
BM  
200  
200  
Total power dissipation, T  
= 99 ˚C2)  
S
P
tot  
300  
mW  
˚C  
Junction temperature  
T
j
150  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
240  
170  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1

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