5秒后页面跳转
BCV62BE6433HTMA1 PDF预览

BCV62BE6433HTMA1

更新时间: 2024-11-19 14:41:03
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管晶体管
页数 文件大小 规格书
7页 531K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-4

BCV62BE6433HTMA1 技术参数

是否无铅:不含铅生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:6 weeks
风险等级:5.77Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:CURRENT MIRROR最小直流电流增益 (hFE):220
JESD-30 代码:R-PDSO-G4元件数量:2
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP参考标准:AEC-Q101
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

BCV62BE6433HTMA1 数据手册

 浏览型号BCV62BE6433HTMA1的Datasheet PDF文件第2页浏览型号BCV62BE6433HTMA1的Datasheet PDF文件第3页浏览型号BCV62BE6433HTMA1的Datasheet PDF文件第4页浏览型号BCV62BE6433HTMA1的Datasheet PDF文件第5页浏览型号BCV62BE6433HTMA1的Datasheet PDF文件第6页浏览型号BCV62BE6433HTMA1的Datasheet PDF文件第7页 
BCV62  
PNP Silicon Double Transistor  
To be used as a current mirror  
3
Good thermal coupling and V matching  
BE  
2
4
High current gain  
1
Low collector-emitter saturation voltage  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
C1 (2)  
Tr.1  
C2 (1)  
Tr.2  
E1 (3)  
E2 (4)  
EHA00013  
Type  
Marking  
3Js  
3Ks  
Pin Configuration  
Package  
BCV62A  
BCV62B  
BCV62C  
1 = C2 2 = C1 3 = E1 4 = E2 SOT143  
1 = C2 2 = C1 3 = E1 4 = E2 SOT143  
1 = C2 2 = C1 3 = E1 4 = E2 SOT143  
3Ls  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
30  
V
Collector-emitter voltage  
(transistor T1)  
V
V
V
CEO  
CBO  
EBS  
30  
Collector-base voltage (open emitter)  
(transistor T1)  
6
Emitter-base voltage  
100  
200  
200  
300  
150  
mA  
DC collector current  
Peak collector current  
Base peak current (transistor T1)  
Total power dissipation, T = 99 °C  
Junction temperature  
Storage temperature  
I
C
I
CM  
I
BM  
mW  
°C  
P
T
j
T
S
tot  
-65 ... 150  
stg  
Thermal Resistance  
Junction - soldering point  
1)  
R
170  
K/W  
thJS  
1
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
2011-07-25  
1

与BCV62BE6433HTMA1相关器件

型号 品牌 获取价格 描述 数据表
BCV62BT/R ETC

获取价格

TRANSISTOR | BJT | ARRAY | BLDG BLOCK | 30V V(BR)CEO | 100MA I(C) | SOT-143
BCV62B-TAPE-13 NXP

获取价格

TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BCV62B-TAPE-7 NXP

获取价格

TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa
BCV62C NXP

获取价格

PNP general purpose double transistor
BCV62C INFINEON

获取价格

PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and V
BCV62C NEXPERIA

获取价格

PNP general-purpose double transistorsProduction
BCV62C BL Galaxy Electrical

获取价格

30V,0.1A,General Purpose PNP Bipolar Transistor
BCV62C MCC

获取价格

Tape&Reel: 3Kpcs/Reel;
BCV62C,215 NXP

获取价格

BCV62 - PNP general-purpose double transistors SOT-143 4-Pin
BCV62C,235 NXP

获取价格

TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General