是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 6 weeks |
风险等级: | 5.77 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 30 V |
配置: | CURRENT MIRROR | 最小直流电流增益 (hFE): | 220 |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 2 |
端子数量: | 4 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCV62BT/R | ETC |
获取价格 |
TRANSISTOR | BJT | ARRAY | BLDG BLOCK | 30V V(BR)CEO | 100MA I(C) | SOT-143 | |
BCV62B-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV62B-TAPE-7 | NXP |
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TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCV62C | NXP |
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PNP general purpose double transistor | |
BCV62C | INFINEON |
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PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and V | |
BCV62C | NEXPERIA |
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PNP general-purpose double transistorsProduction | |
BCV62C | BL Galaxy Electrical |
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30V,0.1A,General Purpose PNP Bipolar Transistor | |
BCV62C | MCC |
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Tape&Reel: 3Kpcs/Reel; | |
BCV62C,215 | NXP |
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BCV62 - PNP general-purpose double transistors SOT-143 4-Pin | |
BCV62C,235 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General |