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BCV62C,215 PDF预览

BCV62C,215

更新时间: 2024-11-19 15:28:31
品牌 Logo 应用领域
恩智浦 - NXP PC光电二极管晶体管
页数 文件大小 规格书
14页 131K
描述
BCV62 - PNP general-purpose double transistors SOT-143 4-Pin

BCV62C,215 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT-143包装说明:PLASTIC PACKAGE-4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:7.33其他特性:FOR TRANSISTOR2 HFE IS 420
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:CURRENT MIRROR
最小直流电流增益 (hFE):420JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.65 VBase Number Matches:1

BCV62C,215 数据手册

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BCV62  
PNP general-purpose double transistors  
Rev. 4 — 26 July 2010  
Product data sheet  
1. Product profile  
1.1 General description  
PNP general-purpose double transistors in a small SOT143B Surface-Mounted  
Device (SMD) plastic package.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
NPN complement  
JEITA  
BCV62  
SOT143B  
-
BCV61  
BCV62A  
BCV62B  
BCV62C  
BCV61A  
BCV61B  
BCV61C  
1.2 Features and benefits  
„ Low current (max. 100 mA)  
„ Low voltage (max. 30 V)  
„ Matched pairs  
„ AEC-Q101 qualified  
„ Small SMD plastic package  
1.3 Applications  
„ Applications with working point independent of temperature  
„ Current mirrors  
1.4 Quick reference data  
Table 2.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
Per transistor  
VCEO collector-emitter voltage  
IC collector current  
Transistor TR1  
hFE DC current gain  
open base  
-
-
-
-
30  
V
100 mA  
VCE = 5 V; IC = 100 μA  
VCE = 5 V; IC = 2 mA  
100  
100  
-
-
-
800  
 
 
 
 
 

BCV62C,215 替代型号

型号 品牌 替代类型 描述 数据表
BCV62C NXP

完全替代

PNP general purpose double transistor

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