生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.07 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 30 V | 配置: | CURRENT MIRROR |
最小直流电流增益 (hFE): | 125 | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | VCEsat-Max: | 0.65 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCV62B | NEXPERIA |
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PNP general-purpose double transistorsProduction | |
BCV62B | NXP |
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PNP general purpose double transistor | |
BCV62B | INFINEON |
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PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and V | |
BCV62B | BL Galaxy Electrical |
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30V,0.1A,General Purpose PNP Bipolar Transistor | |
BCV62B,215 | NXP |
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BCV62 - PNP general-purpose double transistors SOT-143 4-Pin | |
BCV62B,235 | ETC |
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TRANS PNP 30V 100MA DUAL SOT143B | |
BCV62B/T1 | ETC |
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TRANSISTOR SOT-23 | |
BCV62B/T3 | NXP |
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TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General | |
BCV62B-E6327 | INFINEON |
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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon | |
BCV62B-E6433 | INFINEON |
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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |