Datasheet > BCV62_07

BCV62_07

更新时间： 2024-11-23 08:50:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	74K
描述
PNP Silicon Double Transistor

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中文翻译

获取价格

数据手册

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BCV62_07 数据手册

BCV62

PNP Silicon Double Transistor

• To be used as a current mirror

• Good thermal coupling and V matching

• High current gain

• Low collector-emitter saturation voltage

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

C1 (2)

Tr.1

C2 (1)

Tr.2

E1 (3)

E2 (4)

EHA00013

Type

Marking

3Js

Pin Configuration

Package

BCV62A

BCV62B

BCV62C

1 = C2 2 = C1 3 = E1 4 = E2 SOT143

3Ks

3Ls

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

(transistor T1)

CEO

CBO

EBS

Collector-base voltage (open emitter)

(transistor T1)

Emitter-base voltage

DC collector current

100

200

300

150

Peak collector current

Base peak current (transistor T1)

°C

Total power dissipation, T = 99 °C

tot

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Junction - soldering point

≤170

K/W

thJS

Pb-containing package may be available upon special request

For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-04-20

12 3 4 5 6 7

中文翻译

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