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BCV61B PDF预览

BCV61B

更新时间: 2024-11-23 12:33:19
品牌 Logo 应用领域
TYSEMI 晶体晶体管光电二极管
页数 文件大小 规格书
3页 235K
描述
High current gain Low collector-emitter saturation voltage

BCV61B 数据手册

 浏览型号BCV61B的Datasheet PDF文件第2页浏览型号BCV61B的Datasheet PDF文件第3页 
T
r
a
n
Ds  
                                               
ioi  
                                                
s
dt  
                                                 
o
er  
                                                   
ss  
                                                   
Product specification  
BCV62  
Features  
Unit: mm  
High current gain  
Low collector-emitter saturation voltage  
1
2
1
TR2  
4
TR1  
3
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-30  
Unit  
V
Collector-emitter voltage  
-30  
V
Emitter-base voltage  
-6  
V
Collector current  
-100  
mA  
mW  
/W  
Power dissipation  
PD  
250  
Thermal resistance from junction to ambient  
Operating and Storage and Temperature Range  
RθJA  
500  
Tj, TSTG  
-55 to +150  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 3  
4008-318-123  

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