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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| BCV61A,215 | NXP |
获取价格 |
BCV61 - NPN general-purpose double transistors SOT-143 4-Pin |
|
| BCV61A-E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon |
|
| BCV61A-E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon |
|
| BCV61AT/R | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, B |
|
| BCV61A-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
|
| BCV61A-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
|
| BCV61B | TYSEMI |
获取价格 |
High current gain Low collector-emitter saturation voltage |
|
| BCV61B | NXP |
获取价格 |
NPN general purpose double transistor |
|
| BCV61B | INFINEON |
获取价格 |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and V |
|
| BCV61B | NEXPERIA |
获取价格 |
NPN general-purpose double transistorsProduction |
|
解析光耦仿真器：升级光耦合器技术的必要性
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台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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