Datasheet > BCV61

BCV61

更新时间： 2024-10-15 18:09:31

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BCV61 数据手册

SMD Type

Transistors

NPN general purpose double transistor

BCV61

■ Features

● High current gain

Unit: mm

● Low collector-emitter saturation voltage

TR2

TR1

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

℃/W

℃

Power dissipation

250

Thermal resistance from junction to ambient

Operating and Storage and Temperature Range

RθJA

Tj, TSTG

500

-55 to +150

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型号	品牌	获取价格	描述	数据表
BCV61,215	ETC	获取价格	TRANS NPN 30V 100MA DUAL SOT143B
BCV61,235	NXP	获取价格	BCV61 - NPN general-purpose double transistors SOT-143 4-Pin
BCV61/T3	NXP	获取价格	TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, B
BCV61_07	INFINEON	获取价格	NPN Silicon Double Transistor
BCV61A	INFINEON	获取价格	NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and V
BCV61A	NEXPERIA	获取价格	NPN general-purpose double transistorsProduction
BCV61A	TYSEMI	获取价格	High current gain Low collector-emitter saturation voltage
BCV61A	NXP	获取价格	NPN general purpose double transistor
BCV61A	BL Galaxy Electrical	获取价格	30V,0.1A,Medium Power NPN Bipolar Transistor
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