Datasheet > ATF-50189-TR1G

ATF-50189-TR1G

更新时间： 2024-09-15 19:51:39

品牌	Logo	应用领域
安捷伦 - AGILENT		放大器晶体管
页数	文件大小	规格书
21页	165K
描述
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN

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ATF-50189-TR1G 技术参数

生命周期：	Transferred	零件包装代码：	SOT-89
包装说明：	SMALL OUTLINE, R-PSSO-F3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.17	其他特性：	LOW NOISE
配置：	SINGLE	最小漏源击穿电压：	7 V
最大漏极电流 (ID)：	1 A	FET 技术：	HIGH ELECTRON MOBILITY
最高频带：	C BAND	JESD-30 代码：	R-PSSO-F3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最小功率增益 (Gp)：	14 dB
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	SINGLE
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

ATF-50189-TR1G 数据手册

Agilent ATF-50189 Enhancement

Mode^[1]Pseudomorphic HEMT in

SOT 89 Package

Data Sheet

Features

• High Linearity and P1dB

• Low Noise Figure

• Excellent uniformity in product

Pin Connections and

Package Marking

Description

Agilent Technologies’s

specifications

ATF-50189 is a high linearity,

medium power, low noise

E-pHEMT FET packaged in a low

cost surface mount SOT89^[3]

package. The combination of low

noise figure and high output IP3

at the same bias point makes it

ideal for receiver and transmitter

application. Its operating

frequency range is from 400 MHz

to 3.9 GHz.

• SOT 89 standard package

• Point MTTF > 300 years^[2]

OGX

• MSL-1 and lead-free

• Tape-and-Reel packaging option

available

Top View

Specifications

2 GH, 4.5V, 280 mA (Typ.)

• 45 dBm Output IP3

The ATF-50189 is ideally suited

for Cellular/PCS and WCDMA

wireless infrastructure, WLAN,

WLL and MMDS application, and

general purpose discrete

E-pHEMT amplifiers which

require high linearity and power.

All devices are 100% RF and DC

tested.

• 29 dBm Output Power at 1dB gain

compression

• 1.1 dB Noise Figure

• 15.5 dB Gain

Bottom View

Notes:

Package marking provides orientation and

identification:

• 62% PAE at P1dB

• LFOM^[4]14 dB

“0G” = Device Code

“x” = Month code indicates the month of

manufacture.

Notes:

D = Drain

Applications

1. Enhancement mode technology employs a

single positive V_gs, eliminating the need of

negative gate voltage associated with

conventional depletion mode devices.

S = Source

G = Gate

• Front-end LNA Q2 and Q3, Driver or

Pre-driver Amplifier for Cellular/

PCS and WCDMA wireless

infrastructure

2. Refer to reliability datasheet for detailed

MTTF data

Attention:

Observe precautions for

handling electrostatic

sensitive devices.

• Driver Amplifier for WLAN, WLL/

RLL and MMDS applications

3. Conform to JEDEC reference outline MO229

for DRP-N

4. Linearity Figure of Merit (LFOM) is OIP3

divided by DC bias power.

• General purpose discrete E-pHEMT

for other high linearity applications

ESD Machine Model (Class A)

ESD Human Body Model (Class 1C)

Refer to Agilent Application Note A004R:

Electrostatic Discharge Damage and Control.

12 3 4 5 6 7...21

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与ATF-50189-TR1G相关器件

型号	品牌	获取价格	描述	数据表
ATF501P8	AGILENT	获取价格	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Packa
ATF501P8	HP	获取价格	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Packa
ATF-501P8-BLK	HP	获取价格	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Packa
ATF-501P8-BLK	AGILENT	获取价格	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Packa
ATF-501P8-TR1	HP	获取价格	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Packa
ATF-501P8-TR1	AGILENT	获取价格	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Packa
ATF-501P8-TR2	AGILENT	获取价格	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Packa
ATF-501P8-TR2	HP	获取价格	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Packa
ATF-501P8-TR2G	AGILENT	获取价格	暂无描述
ATF-511P8	AGILENT	获取价格	High Linearity Enhancement Mode

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